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The ubiquitous usage of QFN packages for ICs is obviously extended to the use of DFN style packages for Power MOSFETs, resulting in smaller yet thermally better MOSFET packages.
Instead of searching for the next smallest package on the market as silicon performance improves, it makes use of developments in silicon that have enabled smaller die for a given level of resistance and builds an expandable family.
However, it can be difficult to use thermal data from suppliers to real-world situations because data sheets often give a number for use mounted on a one-inch square PC Board, which may or may not match use on a useful PC Board.
The goal of this data is to be as near to the majority of actual PC Boards as possible. Analog Power has characterized a range of packages and boards to provide some real data and understanding of the thermal properties. For comparison with these packages, the DPAK and SO-8 were included in the data.
The Global DFN MOSFET market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Nexperia already provides ESD protection devices in this package, but they have now been able to add them to their line-up of MOSFETs.
New degrees of artificial intelligence (AI) and machine learning (ML) are being incorporated into next-generation wearable and hearable gadgets, posing various problems for product designers. First off, as functionality is added, board space becomes more and more limited. Additionally, as power consumption rises, heat dissipation issues arise.
With dimensions of about 0.63 x 0.33 x 0.25 mm, the ultra-low-profile DFN0603 package is 13% smaller than the next smallest package for MOSFETs.
The RDS of these devices has been lowered by 74%, helping to increase efficiency and enabling wearable equipment designers to attain even more power density. This size reduction has been accomplished without sacrificing device performance.
This new line of MOSFETs consists of: N-channel, 20 V, PMX100UN Trench MOSFET, N-channel Trench MOSFET PMX100UNE, 20 V, 2kV ESD protection (HBM), Trench MOSFET, PMX300UNE 30 V, N-channel, Trench MOSFET, PMX400UP 20 V, P-channel
