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A salami-formed bar of silicon, which is a solitary precious stone, in fact known as a “boule.” The creation of a chip begins with the ingot. The ingot is cut into “wafers” about the thickness of a dime by high-speed saws, ground, and polished to a mirror-like finish. A single crystal of silicon in the shape of a salami, technically referred to as a “boule.” The creation of a chip begins with the ingot. The ingot is cut into “wafers” about the thickness of a dime by high-speed saws, ground, and polished to a mirror-like finish.
The Global Silicon Ingot Analyzer market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
SiBrickScan (SBS) is a specialised at-line system that produces a concentration profile along the longitudinal axis for the FT-IR measurement of interstitial oxygen in complete silicon ingots.
A significant cost-saving advantage is having access to this information without having to saw test samples or wafers.
A well-known and important analysis technique, interstitial oxygen quantification by FT-IR spectroscopy (ASTM/SEMI 1188) is restricted to thin Si samples in the low mm range.
SiBrickScan (SBS) is the first commercially available system that is completely dedicated to determining the oxygen gradient in complete ingots along their major axis without the need for time-consuming and destructive thin sample preparation.
This limitation is overcome by SiBrickScan (SBS). SBS employs dependable and cutting-edge Bruker FT-IR technology in conjunction with a related infrared overtone absorption band.
The oxygen gradient of Si ingots can be used to draw important conclusions, such as how to control and improve the silicon crystallisation process or which batches contain bad raw materials.
As a result, SBS will help cut costs by improving product quality and lowering the number of faulty wafers. The random sampling of individual ingots saves a lot of time and effort when it comes to sample preparation and provides pertinent information earlier.
SiBrickScan permits the examination of oxygen interstitials in silicon ingots up to 500 mm in length. The crystallisation process can be improved and individual ingots can be qualified before sawing thanks to this useful information.
The calibration used in the SBS Oxygen evaluation is directly related to or derived from ASTM/SEMI 1188. The interstitial oxygen concentration is evaluated with the utmost precision because the correlation between the two approaches is nearly perfect.
SBS can achieve interstitial oxygen detection limits of less than 2 ppma (less than 1017/cm3) depending on the shape and properties of the sample, such as resistance.
