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GaN enables overcoming the limitations seen with the use of. Si devices. • A three level neutral-point active-clamped inverter enables the. use of commercially available 650 V GaN devices when. operating with energy storage devices around 1000 V.
GaN transistors have a high breakdown tolerance, enhanced thermal conductivity, faster-switching speeds, and lower on-resistance.
Traditionally, the most common material used in semiconductor production has been Silicon (Si) due to its abundance and affordability.Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor.
With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.gallium nitride technology has opened a new era in the world of power electronics.
The three most important parameters for GaN technology are the higher bandgap, critical field, and electron mobility.
When these parameters are combined, because the critical field of the GaN crystal is 10× higher, it follows that the electrical terminals can be 10× closer together when compared with a silicon MOSFET.
Global GaN-based inverter market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Yaskawa Electric Launches GaN-based PV Inverter announced that Yaskawa Electric Corporation is launching the mass production of the world’s smallest power conditioner in its class – and the first to use a GaN power module.
Based on Transphorm’s EZ-GaNIP-protected platform, Yaskawa’s Enewell-SOL V1 series 4.5kW indoor PV inverter will be distributed in Japan, with a targeted annual production of 34,000 systems.
The new 98%+ peak efficiency, GaN-based power conditioner operates at three-times higher frequencies than silicon-based modules.
The unit is half the size of competitive solutions thanks to its smaller magnetics and heat sinks. And its exceptional efficiency allows for fan-free, low noise operation.
Powered by Transphorm™, the Yaskawa PV inverter’s TPD3215M module utilises the only qualified, high-voltage (600V) GaN-based solution on the market today.
Yaskawa fully exploited the system value proposition of Transphorm GaN by making its record-breaking performance possibilities a commercial reality.
This level of mass production for the rapidly growing residential PV inverter segment is one more step toward establishing GaN as the new power conversion platform.
