By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Dry etching is now employed in semiconductor fabrication procedures due to its superior ability to undertake anisotropic etching (material removal) to build high aspect ratio structures (e.g. deep holes or capacitor trenches) over wet etching.
The technique of eliminating a masking pattern of semiconductor material by hitting it with ions is known as dry etching, sometimes known as plasma etching. A plasma of reactive gases, such as oxygen, boron, fluorocarbons, chlorine, and trichloride, often makes up the ions.
After metallographic grinding and polishing procedures, etching is a chemical or electrolytic process used. Using etching to increase surface contrast will allow you to see the microstructure or macrostructure.
The Global Dry-etching exhaust gas treatment equipment market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment. Particles stuck to the wafer edge by capacitively coupled plasma etching equipment during the oxide layer etching procedure result in flaws that lower the yield of semiconductor wafers.
Adjusting the voltage and temperature of the electrostatic chuck, the plasma discharge sequence, the gas flow, and the pressure parameters during the etching process to lessen edge particle contamination in plasma etching equipment. By examining particle maps after wafer etching, the proposed edge particle reduction method was created.
By lowering the voltage and temperature variations of the electrostatic chuck and producing a plasma sheath with a continuous discharge sequence of radio-frequency plasma, edge particle adhesion in plasma etching equipment may be decreased.
The quantity of wafer edge particles is also influenced by the gas pressure and flow rate. The equipment settings were improved using experimental data in order to decrease edge particle contamination and enhance edge wafer defects after dry etching.
