3D-MiM technology utilizes a more simplified architecture which eliminates BGAs between packages for system-level performance, power and form-factor (PPA) purposes.
MIM (Metal-Insulator-Metal) capacitor: A parallel plate capacitor is the same as a MIM capacitor. The formed capacitor has a low capacitance value due to the large spacing between the two layers of metal on the top layer.
The top two layers of metal of MIM capacitors typically consist of a special metal layer in the middle. A capacitor bottom metal (CBM) electrode is arranged over a semiconductor substrate in some versions of the MIM capacitor.
The CBM electrode of the MIM capacitor is covered by a high-k dielectric, and the high-k dielectric is covered by a capacitor top metal (CTM) electrode.
The MIM capacitor has a dummy structure that extends laterally from the CTM electrode and is arranged vertically over the high-k dielectric layer.The conductive body of the dummy structure is made of the same material as the CTM electrode.
The Global 3D MIM Capacitor market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
For use in integrated circuits (ICs) with through-silicon vias (TSVs), a novel integrated capacitor called “3D MIM Capacitor Embedded in TSV” is proposed, designed, fabricated, and characterized.
Because it makes use of the high aspect ratio structure of TSVs, this 3D embedded capacitor has the potential to significantly increase its capacitance density.
Because it is embedded in the trenches of existing TSVs rather than dedicated trenches, this technology does not consume additional silicon area in comparison to conventional trench capacitors.
According to the model, a conventional trench capacitor with the same design parameters would have an ultrahigh capacitance density.A sample with a capacitance density had a higher breakdown voltage and leakage current density.
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