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A film is produced on a substrate during atomic layer deposition by exposing its surface to different gaseous species (typically referred to as precursors or reactants). The precursors are injected into the reactor as a sequence of successive, non-overlapping pulses, not all at once like in chemical vapour deposition.
The precursor molecules interact with the surface in each of these pulses in a self-limiting manner, which causes the reaction to stop after all of the reactive sites on the surface have been used up. As a result, the kind of precursor-surface interaction determines the maximum amount of material that may be deposited on the surface following a single exposure to all of the precursors (a process known as an ALD cycle).
A subclass of chemical vapour deposition, atomic layer deposition (ALD) is a thin-film deposition technology based on the successive application of a gas-phase chemical process. Precursors are two compounds that are typically used in ALD processes (also called “reactants”).
These precursors undergo sequential, self-limiting reactions with the surface of a material one at a time. Through repeated exposure to various precursors, a thin coating is slowly deposited. ALD is a crucial step in creating semiconductor devices and is one of the processes used to create nanomaterials.
The global ALD Single Wafer Reactors market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
An revolutionary single wafer atomic layer deposition (ALD) process technique for 300mm wafers called TENZA ALD was introduced by ASM International N.V. With the greatest film quality, conformal coverage along the whole trench, and highest productivity in its class, TENZATM ALD is designed for gap-fill applications.
ASM’s high productivity quad chamber module (QCM) architecture, which features four tightly interconnected reactors on each QCM, is used to manufacture TENZA ALD. Up to 4 QCMs using the TENZA ALD process can be connected to the XP8 platform in a small configuration to process up to 16 wafers at once.
In order to offer improved process capability at the lowest total cost of ownership, TENZA ALD makes use of ASM’s production-tested QCM quad chamber module architecture and XP8 platform, which have been in large volume manufacturing fabs for some time. According to the Chief Technology Officer and Member of the Management Board, “TENZA ALD provides ultra-high aspect ratio (>100:1) gap-fill for advanced memory devices.
In comparison to traditional ALD methods, TENZA ALD uses a unique design that is optimised for ALD reactions, limiting process volume for optimal precursor utilisation efficiency, consuming less precursor, and producing more than twice as much. To increase process reproducibility, the RF plasma power supply and matching system are separately controlled by each reactor chamber.
