AUTOMOTIVE IGBT-SIC MODULE DRIVER MARKET

INTRODUCTION

SIC stands for silicon carbide semiconductor, and IGBT stands for insulated gate bipolar transistor. In sectors requiring high voltage, high temperature, and high power, SiC IGBT devices exhibit greater competitiveness.

SiC mosfet and SiC gate turn-off thyristor flaws are made up for by the superior static and dynamic performance of SiC IGBTs (GTOs). The SIC IGBT with 4H-polytype and n-channel is chosen among SiC polytypes and channel types because of its low forward voltage, quick switching, and large safe operating region.

AUTOMOTIVE IGBT-SIC MODULE DRIVER MARKET SIZE AND FORECAST

The Global Automotive IGBT-SiC module driver market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

RECENT PRODUCT DEVELOPMENT AND INNOVATION IN AUTOMOTIVE IGBT-SIC MODULE DRIVER MARKET

Infineon EconoDUAL module gate-driver boards from the SCALE EV series have been introduced by Power Integrations. Dual-channel plug-and-play drivers for silicon IGBTs and silicon-carbide (SiC) MOSFETs that are automotive-qualified are available in the SCALE EV family.

With increased characteristics for driving and safeguarding silicon carbide (SiC) MOSFETs as well as functional safety, the GD3160 is an upgraded, cutting-edge single-channel high-voltage isolated gate driver.

It enables users to set the ideal parameters for controlling and safeguarding practically any SiC MOSFET or Si IGBT power switch. It enables users to set the ideal parameters for controlling and safeguarding practically any SiC MOSFET or Si IGBT power switch.

The 35-V, single-channel, output stage power management gate drivers for silicon-carbide (SiC) FETs and insulated-gate bipolar transistors (IGBTs) were released by Texas Instruments Inc.

A novel silicon-carbide (SiC) based hybrid IGBT will be unveiled and displayed by ON Semiconductor.

The AFGHL50T65SQDC offers low conduction and switching losses in numerous power applications, including those that will benefit from reduced reverse recovery losses, such as totem pole based bridgeless power factor correction (PFC) and inverters. It does this by utilising the most recent field stop IGBT and SiC Schottky diode technology.

THIS AUTOMOTIVE IGBT-SIC MODULE DRIVER MARKET REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost per Automotive IGBT-SiC module driverright now and how will it change in the next 5-6 years?
2. Average cost to set up aGlobal Automotive IGBT-SiC module driver marketin the US, Europe and China?
3. How manyAutomotive IGBT-SiC module driverare manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of aAutomotive IGBT-SiC module driverand key vendor selection criteria
6. Where is theGlobal Automotive IGBT-SiC module driver market manufactured? What is the average margin per equipment?
7. Market share ofGlobal Automotive IGBT-SiC module driver marketmanufacturers and their upcoming products
8. The most important plannedGlobal Automotive IGBT-SiC module driver marketin next 2 years
9. Details on network of majorGlobal Automotive IGBT-SiC module driver and pricing plans
10. Cost advantage for OEMs who manufactureGlobal Automotive IGBT-SiC module driver marketin-house
11. 5 key predictions for next 5 years inGlobal Automotive IGBT-SiC module driver market
12. Average B-2-BGlobal Automotive IGBT-SiC module driver marketprice in all segments
13. Latest trends inGlobal Automotive IGBT-SiC module driver, by every market segment
14. The market size (both volume and value) ofGlobal Automotive IGBT-SiC module driver in 2024-2030 and every year in between?
15. Global production breakup ofGlobal Automotive IGBT-SiC module driver market, by suppliers and their OEM relationship