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A MOSFET is a type of field-effect transistor, most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability can be used for amplifying or switching electronic signals.
The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors (bipolar junction transistors/BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device.
There are thousands to millions of integrated MOSFET transistors on each of the digital integrated circuits used in microprocessors and memory devices, which perform the fundamental switching tasks needed to build logic gates and data storage.
In applications like switch mode power supplies, variable-frequency drives, and other power electronics, where each device may be switching hundreds of watts, discrete devices are frequently employed.
MOSFET transistors are used as analogue signal and power amplifiers in radio-frequency amplifiers up to the UHF band, radio systems as mixers or oscillators to change frequencies, in audio-frequency power amplifiers for home and car audio systems, sound reinforcement, and public address systems.
The Global Automotive MOSFET market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
For automotive applications, Infineon provides a large selection of power MOSFETs that include N-Channel, P-Channel, and Dual-channel MOSFETS. The number of MOSFET-related failures is kept to an absolute minimum by engineers and automakers employing high-quality components, such as automotive power MOSFETs from Infineon.
Infineon offers a broad selection of automotive MOSFETs that are created with the experience of many decades, together with sensors, microcontrollers, and other necessary semiconductor solutions.
The LF Dual Series MOSFET has been introduced by Shindengen Electric Manufacturing Co., Ltd. for several vehicle ECU types. This series helps reduce the number of components in a variety of applications, such as automotive motor drive, engine ECU (injector drive), reverse connection and reverse current prevention relays, and more.
It does this by maintaining the low dissipation and large current characteristics of Shindengen’s conventional products while incorporating two elements into a single package.
To lessen the conduction loss of automobile BLDC motors, Magnachip has created a new 40V MOSFET with low RDS(on), and the business has started mass producing this new MOSFET. The new 40V MOSFET is fully AEC-Q101 (Automotive Electronics Council-Q101) approved, which is important since reliable automotive semiconductors are essential to vehicle safety.
Toshiba Launches Automotive 40V N-Channel Power MOSFETs with New Package that Contributes to High Heat Dissipation and Size Reduction of Automotive Equipment. Toshiba Electronic Devices & Storage Corporation has introduced two automotive 40V N-channel power MOSFETs, the “XPJR6604PB” and “XPJ1R004PB,” that employ Toshiba’s innovative S-TOGL (Small Transistor Outline Gull-wing Leads) container and U-MOS IX-H process chips.
Safety-critical applications, such as autonomous driving systems, assure reliability through redundant design, requiring more devices and mounting space than normal systems. As a result, progressive size reductions in automotive equipment necessitates power MOSFETs with high current densities.
Toshiba’s innovative S-TOGL package, which has a post-less construction that unifies the source connective component and outer leads, is used in the XPJR6604PB and XPJ1R004PB. The use of a multi-pin arrangement for the source leads reduces package resistance.
In comparison to Toshiba’s TO-220SM (W) package product, which has the same thermal resistance properties, the S-TOGL package with Toshiba’s U-MOS IX-H process significantly reduce On-resistance by 11%. Comparing the new package to the TO-220SM(W) package, the necessary mounting area is reduced by about 55%.
Additionally, the new package’s 200A drain current rating is higher than Toshiba’s equivalent-sized DPAK + package, allowing for high current flow. S-TOGL realises high-density and compact layouts, shrinks the size of automotive equipment, and increases heat dissipation overall.
Since automotive equipment is utilised in high-temperature situations, the dependability of surface-mount solder junctions is essential. The S-TOGL package incorporates gull-wing leads, which reduce mounting stress and improve solder union durability.
Toshiba supports grouping shipment for the new products, assuming that many devices will be linked in parallel for applications needing greater current operation.This enables the use of product groupings with minor change in characteristics in designs.
