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Metal-Oxide Semiconductor Field Effect Transistors, or power MOSFETs, are three-terminal silicon devices that work by sending a signal to the gate that regulates current flow between the source and drain.
Their breakdown voltage ratings (BVDSS) range from 10 to 1000 volts, with a maximum current conduction capacity of many tens of amps.
The gate, source, and drain of the lateral MOSFETs used in integrated circuits are located completely on the top of the device.
Current flows over a channel that is parallel to the surface. The device substrate serves as the drain terminal of the Vertical Double Diffused MOSFET (VDMOS).
Compared to discrete MOSFETs, MOSFETs utilised in integrated circuits have a higher on-resistance.
The Global Automotive Power MOSFET market accounted for $XX Billion in 2024 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The LF Dual Series MOSFET has been introduced by Shindengen Electric Manufacturing Co., Ltd. for several vehicle ECU types.
This series helps reduce the number of components in a variety of applications, such as automotive motor drive, engine ECU (injector drive), reverse connection and reverse current prevention relays, and more.
It does this by maintaining the low dissipation and large current characteristics of Shindengen’s conventional products while incorporating two elements into a single package.
The series additionally makes use of lead terminals with gull-wing shapes to achieve good mounting reliability for automotive applications.
With Cu clip connections, this series further enhances the features of the fourth-generation power MOSFET (EETMOS 4), which have low electrical resistance and high heat dissipation.
