By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Coming Soon
A wet etchant used in microfabrication is buffered hydrogen fluoride(BHF), sometimes referred to as HF or buffered oxide etch (BOE). Its main application is for etching silicon dioxide (SiO2) or silicon nitride thin films (Si3N4).
It is a combination of hydrofluoric acid and buffering agents such as ammonium fluoride (NH4F) (HF). Concentrated HF (usually 49% HF in water) peels photoresist used in lithographic patterning and etches silicon dioxide too quickly for accurate process control.
To achieve more controllable etching, people frequently utilise a buffered oxide etch.In HF solutions, several oxides result in insoluble byproducts.
In order to dissolve these insoluble compounds and create a higher-quality etch, HCl is frequently added to BHF solutions.
The Global Buffered Hydrogen Fluoride market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The hydrofluoric acid content of a buffered oxide etching composition is to be determined using methods and compositions according to the invention.
Because hydrofluoric acid has variable equilibriums and is toxic, it is challenging to handle and analyse, making it particularly challenging to determine the amount present in buffered oxide etching compositions.
However, using the wrong amount of hydrofluoric acid when making microchips will damage those chips.
In order to acquire precise measurements that are immediate, safe, and accurate, the invention uses a novel way of spectrographically detecting the hydrofluoric acid when it comes into contact with additional chromogenic substances.
The process may involve anticipating the expected etch rate of a particular BOE composition based on the interaction of temperature, surfactant type, surfactant concentration, HF concentration, composition flow rate, composition flow direction, and proximity of the application location of the BOE composition to the location of a layer-layer interface on a wafer.
Applying the BOE composition on the wafer may cause etching. A chromogenic agent may be used in a SIA procedure to measure the HF concentration concurrent with etching.
