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This specification outlines the mechanical and electrical specifications for synchronous, double-data-rate, small-outline DRAM dual-in-line memory modules (DDR5 SODIMMs). These DDR5 SODIMMs are designed to be inserted in PCs, laptops, and other systems as main memory.
The existing DDR4 memory modules we use today will be replaced by DDR5, which is the next generation of double data rate memory. DDR5 is made to enable much higher frequencies to aid with memory bottlenecks with high-core-count CPUs and significantly enhance chip density for larger capacity sticks.
Synchronous dynamic random-access memory includes Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM). The goal of DDR5 was to increase bandwidth while lowering power consumption when compared to DDR4 SDRAM.
DDR5 uses less electricity because it lowers memory voltage even further than DDR4—to 1.1 V. Onboard voltage regulators are a feature of DDR5 modules, allowing for faster rates. DDR5 supports two memory channels and a high speed per module.
Decision Feedback Equalization (DFE), a brand-new function, allows I/O speed scaling for more bandwidth and performance enhancement. Greater bandwidth is supported by DDR5 than by DDR4.
The Global DDR5 SODIMM Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The DDR5 SO-DIMMs with a 4800MHz frequency was created by Team Group for mobile devices. Once both firms start making processors and motherboards that support DDR5, Team Group is prepared to commence memory validation of these DDR5 modules with Intel and AMD.
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