Dual Gate MOSFETs are a type of MOSFET with two gates; they can be used as mixers for RF applications and to add more isolation between the drain and gate. Very high frequency (VHF) mixers and delicate VHF front-end amplifiers frequently employ dual-gate MOSFETs.
Dual gate MOSFET benefits include lower supply voltage and threshold voltage with higher drive currents, Reduced channel and gate leakage current while the off state reduces power consumption. Separate gate control during the on state reduces power consumption and chip space.
The global dual MOSFET market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
A new dual output IGBT/MOSFET driver has been released by Toshiba.Toshiba Electronics GmbH unveiled a new IGBT/MOSFET gate driver with more integrated features.
In a variety of applications, including as industrial inverters, uninterruptible power supply (UPS), power conditioners for solar energy, and motor controls, the new TLP5231 will make the design process simpler.
A pair of outputs on the TLP5231 pre-driver are intended to power external p- and n-channel MOSFET current buffers. As a result, a wide range of MOSFETs with different current ratings can be used, enabling rail-to-rail gate voltage control of the IGBT.
The driver is rated for 1.0 A continuously and can source and sink peak currents of up to 2.5 A. The LF Dual Series MOSFET has been introduced by Shindengen Electric Manufacturing Co., Ltd. for several vehicle ECU types.
This series helps reduce the number of components in a variety of applications, such as automotive motor drive, engine ECU (injector drive), reverse connection and reverse current prevention relays, and more. It does this by maintaining the low dissipation and large current characteristics of Shindengen’s conventional products while incorporating two elements into a single package.
The series additionally makes use of lead terminals with gull-wing shapes to achieve good mounting reliability for automotive applications. In order to meet this expanding market demand, Shindengen is introducing the AEC-Q101 automotive dependability standard compatible, 40/60V withstand voltage, small, low ON resistance OF Dual Series 2 element power MOSFET.
The characteristics of the 4th generation power MOSFET are further enhanced by this series, which lowers the figure of merit (FOM), which is the sum of the ON resistance and total gate load, by 25% when combined with Cu clip connections with low electrical resistance and high heat dissipation.
Comparing the use of small packages with 2 of these elements to those with only 1 element, the mounting space and number of components are reduced by 50%, which aids in the circuit downsizing and weight reduction process.
The 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect transistor (MOSFET) module will be made available by Mitsubishi Electric Corporation for use in high-frequency power amplifiers of commercial two-way radios.
The 700MHz band, previously used for analogue TV broadcasting, has been reallocated for commercial two-way radio, increasing the demand for radios that support this band in response to the 150MHz and 400MHz frequency bands, which are used for various wireless systems, becoming congested in North America and other markets.
Dual-MOSFET products (Nch+Pch) with withstand voltages of 40V and 60V were developed by ROHM under the QH8Mx5 and SH8Mx5 series. The gadgets are perfect for powering base station motors (cooling fans) and industrial equipment like factory automation systems that need a 24V input.
When compared to Pch MOSFETs in dual MOSFET devices in the 40V class, the ON resistance of the QH8Mx5/SH8Mx5 series is 61% lower, setting a new standard for the class. This results in a significant reduction in power usage across a range of applications.
Furthermore, by minimizing mounting space and the time needed for component selection, merging two devices into a single package helps miniaturize applications (combining Nch and Pch).
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