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WBG semiconductors, particularly SiC and group III-Nitrides, have improved dramatically in terms of material quality, and are currently used in a wide range of high-power/high-frequency electronics, optoelectronics, and sensing devices.
Alternative WBG materials (such as Ga2O3, ZnO, and diamond) as well as heterostructures (such as 2D/3D) are also gaining popularity for advanced applications.
The Europe Wide Band Gap Semiconductor Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
The high efficiency wide bandgap semiconductor devices developed by Infineon for power electronics product solutions are groundbreaking. Infineon’s CoolSiC is one of the high-performance wide band gap semiconductor materials used in this novel and groundbreaking technology. CoolGaN technologies are also available in discrete and integrated power stages.
When compared to silicon, silicon carbide (SiC) has a substantially wider bandgap of 3 electron volts (eV) and a much higher heat conductivity. SiC-based MOSFETs are ideally suited for high breakdown, high power, and high frequency applications. Device metrics such as the RDS(on) rise less over temperature in silicon carbide power semiconductors than in silicon.
This enables designers to operate with tighter margins or at higher temperatures in wide bandgap power electronics systems, resulting in improved performance.
The GaN solution from Infineon is based on the most reliable and high-performing idea on the market, with quick turn-on and turn-off speeds. CoolGaN gallium nitride solutions are designed to deliver excellent performance and reliability while delivering considerable value to a wide range of systems, including server, telecom, wireless charging, adapter and charger, and audio.
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