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Gallium Nitride (GaN) based inverters are a new type of power electronic inverters that offer a significant improvement over conventional Silicon (Si) based inverters.
GaN inverters are smaller, lighter, and more efficient than Si inverters, making them ideal for the automotive, aerospace, and industrial sectors. They are also much more stable than Si inverters and have a higher switching frequency. This increased frequency allows for more efficient power conversion and allows for greater control over the output power.
GaN inverters are also more tolerant to heat and can operate at higher temperatures without any damage to the internal components. Additionally, GaN inverters have a much longer lifetime than Si inverters, making them a great choice for applications where long-term reliability is a must. Finally, GaN inverters are much more cost-effective than Si inverters, making them a great choice for those on a budget.
Overall, GaN inverters are a great choice for applications requiring high efficiency, high power density, and long-term reliability. They are also much more cost-effective than Si inverters, making them an attractive option for those on a budget. GaN inverters offer a great combination of performance and affordability that make them an ideal choice for many applications.
The Global EV GaN inverter market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
To hasten the adoption of GaN power systems in the Chinese EV industry, GaN Systems has announced a partnership with ACEpower, a prominent producer of power supply and EV charging solutions for the Chinese market. To increase the use of gallium nitride (GaN) power technology in charging modules, onboard chargers (OBC), and other power conversion applications for the Chinese EV market, GaN Systems and ACEpower have announced their alliance.
Through the collaboration, the size, weight, and efficiency of EV power systems will be increased by combining ACEpower’s vast power electronics experience with GaN Systems’ automotive-grade, high-performance GaN transistors. The most recent announcement comes after the high-power onboard charger (OBC) reference platform made with GaN devices was released by GaN Systems.
GaN Systems and ACEpower will work together to optimize power conversion architecture and create cutting-edge integrated power modules as part of their relationship. High-frequency magnetics will also be studied to provide the possibility of smaller solution sizes and higher power densities. Silicon-based power systems are frequently bulky, ineffective, and unfit for the needs of contemporary EVs.
The two businesses are working to create solutions that overcome these constraints by utilizing the most recent GaN technologies. These solutions will provide higher-frequency circuits with higher power densities and more efficient operating frequencies, which are ideal for next-generation OBC, traction inverters, and other EV power systems.
