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In order for all the digital devices that make up modern lives to use electricity more conveniently and safely, IGBT power modules are required to convert electricity from one form to another.
Because of the heat loss during the conversion process, which in some situations can be as high as 5%, power modules get hot. It is typically directly connected to the traction motor in an electric car and is a high voltage, high current device.
In essence, it uses the DC from the car’s battery to convert the high power required to run the motor into AC control signals.
The global EV IGBT module market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
SCALE EV, an IGBT module that is automotive-qualified, is released by Power Integrations. The SCALE EV series of gate-driver boards for Infineon EconoDUAL modules was unveiled by Power Integrations, the industry pioneer in gate driver technology for medium- and high-voltage inverter applications.
The driver is intended for high-power automotive and traction inverters for EV, hybrid, and fuel-cell vehicles, including buses and trucks, as well as construction, mining, and agricultural equipment. It is suitable for original, clone, and new SiC variations.
Two reinforced gate-drive channels, related power supply, and monitoring telemetry are all included in the scale EV board-level gate drives. The new boards can be used to execute ASIL C traction inverter designs because they are automotive-qualified and ASIL B certified.
The EconoDUAL 900 A 1200-volt IGBT half-bridge module’s 2SP0215F2Q0C is the first SCALE EV family member to be made available.SCALE EV, an IGBT/SiC module that is automotive-qualified, is released by Power Integrations.
The SCALE EV series of gate-driver boards for Infineon EconoDUAL modules was unveiled today by Power Integrations, the industry pioneer in gate driver technology for medium- and high-voltage inverter applications.
The EconoDUAL 900 A 1200-volt IGBT half-bridge module’s 2SP0215F2Q0C is the first SCALE EV family member to be made available.
A new generation of IGBTs has been released by semiconductor producer Renesas Electronics. The AE5 is a silicon IGBT with a 1.3 V on-voltage and an operating junction temperature range of -40 to 175 C.
When compared to the present AE4 method at the same current density, the AE5 “enables a reduction in inverter power losses, boosting power efficiency by up to 6%, allowing EVs to drive longer distances and utilize fewer batteries.”
Additionally, according to Renesas, the AE5 offers “compact chip size (100 mm2/300 A) tuned for low power losses and strong input resistance” and “10% higher current density compared to typical devices.” On the company’s 200 and 300 mm wafer lines in Naka, Japan, the AE5 will be mass produced.
This second-generation automotive grade IGBT-EV power inverter control platform (ICP2.0) system from NXP, based on the GD3160 gate driver IC, provides both hardware and software enablement for electric vehicle traction inverters applications targeting ISO 26262 ASIL C/D employing IGBT power modules.
The EV-INVERTERHDBT platform offers a thorough framework that has been dyno tested and certified for the development of an IGBT inverter control system solution. For the purpose of controlling silicon carbide (SiC) MOSFETs, refer to the EV-INVERTERHD platform with GD3160.
NXP’s extensive automotive portfolio includes top-notch automotive MCUs, CAN PHY and Ethernet interfaces, safety system basis chips (SBC), and high-voltage isolated IGBT/SiC gate driver IC devices. These components support ICP2.0.