An early type of dynamic random access memory (DRAM) chip called extended data out random access memory (EDO RAM/DRAM) was created to boost the performance of fast page mode DRAM (FPM DRAM) Extended memory refers to memory addresses that are bigger than or equal to one megabyte.
The data or programme code required by a computer processor to function is often stored in dynamic random access memory (DRAM), a type of semiconductor memory.
DRAM is a popular variety of random access memory (RAM) that is utilised in servers, workstations, and personal computers (PCs).
The Global Extended Data Out DRAM market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The goal of the fast page mode DRAM (FPM DRAM) that was popular in the 1990s was to increase performance. This led to the development of extended data out random access memory (EDO RAM/DRAM), a first-generation dynamic random access memory (DRAM) chip.
Its primary advantage was that it reduced wait times by starting a new cycle while keeping the data output buffer from the previous cycle active.
This allowed for some pipelining (operational overlap), which enhanced speed.Explanations of Expanded Data Out Random Access Memory from Techopedia When Intel initially released the 430FX chipset, which supports EDO DRAM, extended data out dynamic random access memory was developed and started to replace rapid page mode DRAM.
In the past, EDO DRAM might have taken the place of FPM DRAM, but if the memory controller wasn’t made expressly for EDO, then the performance remained the same as FPM.
Single-cycle Once the page has been picked, EDO DRAM can complete a memory transaction in two clock cycles as opposed to three, if necessary.
Because of the EDO’s capabilities, it was able to take the place of PCs’ slow L2 cache at that time, reducing the significant performance loss caused by the L2 cache while also lowering the cost of PC construction.
Hence, a system employing EDO with L2 cache was both more efficient than one using FPM with L2 cache and less expensive to construct.
EDO was designed to operate at 5 volts with a maximum clock rate of 40 MHz, 64 bits of bus bandwidth, and 320 MBps of peak bandwidth.
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