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Gallium nitride on silicon is one of the greatest choices for semiconductor devices. This material can withstand far more energy and is more stable at greater temperatures than silicon.
As a result of this feature, it is a better option for high-frequency semiconductor applications. As a result, it is a more cost-effective semiconductor alternative in power-efficient devices. Gallium nitride on a silicon substrate can be the finest option if you need a high-frequency gadget.
The Global Gallium Nitride On Silicon (GaN-on-Si) Wafer Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2027, registering a CAGR of XX% from 2022 to 2027.
The majority of LEDs today are made using expensive GaN-on-sapphire wafers. GaN-on-Si wafers are not only less expensive per square foot, but they also allow for larger wafer diameters, allowing normal silicon wafer processing lines to be used.
As a result, GaN-on-Si could play a key role in lowering LED production costs, allowing energy-efficient LED lighting to be used in more applications and markets.