By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Multi User License - $2,999
Coming Soon
Compared to comparable silicon-based alternatives, gallium nitride (GaN) based HEMTs have a faster switching speed, greater thermal conductivity, and lower on-resistance.
Field-effect transistors (FETs) called GaN HEMTs can switch more quickly than silicon power transistors.
GaN HEMTs’ tiny size and this feature enable the devices to be more energy-efficient while providing more room for external components.
The global GaN HEMT market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
Transphorm Inc. is to announce that its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the sector to be JEDEC approved, has received Electronic Products’ Product of the Year Award.
Thousands of items released were appraised by the editors of Electronic Products, a top trade publication for electronic design experts. The winning products were chosen based on their creative designs, notable technological or application advancements, and significant pricing and performance achievements.
Based on its capacity to enable compact, less expensive power electrical systems and devices, such as power supplies and adapters, PV Inverters for solar panels, motor drives, and power conversion for electric vehicles, Transphorm’s TPH3006PS GaN demonstrated success in the “Discrete Semiconductor” category.
A highly effective GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V is Infineon’s CoolGaN.
GaN technology from Infineon, which has a wealth of experience in the semiconductor industry, helped the e-mode concept reach maturity through end-to-end production in large quantities.
Among all GaN HEMTs on the market, the leading quality guarantees the highest standards and provides the most dependable and effective solution.
Modern silicon devices are unable to take advantage of the increased power density and enhanced energy efficiency that CoolGaN offers switched-mode power circuits.
Switching speed is crucial in high-frequency activities, above 200-250 kHz, since it affects how energy is transferred. A very short dead-time is made possible by Infineon’s CoolGaN’s ultrafast switching speed.
Customers may rely on its dependability and quality as it has an anticipated lifetime of more than 15 years with a failure rate < 1 FIT
.Since Infineon’s CoolGaN transistors lack a body diode and minor carrier, they do not show reverse recovery. To achieve improved efficiency, for instance in datacenter and server power supply, in order to save energy and lower OPEX, hard-switching topologies like totem-pole PFC might be used
