Global GaN HEMT Market 2022-2030

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     Compared to comparable silicon-based alternatives, gallium nitride (GaN) based HEMTs have a faster switching speed, greater thermal conductivity, and lower on-resistance.


    Field-effect transistors (FETs) called GaN HEMTs can switch more quickly than silicon power transistors.


    GaN HEMTs’ tiny size and this feature enable the devices to be more energy-efficient while providing more room for external components.

    infography; GaN HEMT Market, GaN HEMT Market Size, GaN HEMT Market Trends, GaN HEMT Market Forecast, GaN HEMT Market Risks, GaN HEMT Market Report, GaN HEMT Market Share



    The global GaN HEMT market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.



    Transphorm Inc. is to announce that its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the sector to be JEDEC approved, has received Electronic Products’ Product of the Year Award.


    Thousands of items released were appraised by the editors of Electronic Products, a top trade publication for electronic design experts. The winning products were chosen based on their creative designs, notable technological or application advancements, and significant pricing and performance achievements.


    Based on its capacity to enable compact, less expensive power electrical systems and devices, such as power supplies and adapters, PV Inverters for solar panels, motor drives, and power conversion for electric vehicles, Transphorm’s TPH3006PS GaN demonstrated success in the “Discrete Semiconductor” category.


    A highly effective GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V is Infineon’s CoolGaN.


    GaN technology from Infineon, which has a wealth of experience in the semiconductor industry, helped the e-mode concept reach maturity through end-to-end production in large quantities. 


    Among all GaN HEMTs on the market, the leading quality guarantees the highest standards and provides the most dependable and effective solution.


    Modern silicon devices are unable to take advantage of the increased power density and enhanced energy efficiency that CoolGaN offers switched-mode power circuits. 


    Switching speed is crucial in high-frequency activities, above 200-250 kHz, since it affects how energy is transferred. A very short dead-time is made possible by Infineon’s CoolGaN’s ultrafast switching speed.


    Customers may rely on its dependability and quality as it has an anticipated lifetime of more than 15 years with a failure rate < 1 FIT


    .Since Infineon’s CoolGaN transistors lack a body diode and minor carrier, they do not show reverse recovery. To achieve improved efficiency, for instance in datacenter and server power supply, in order to save energy and lower OPEX, hard-switching topologies like totem-pole PFC might be used





    1. What is the average cost per  global GaN HEMT market right now and how will it change in the next 5-6 years?
    2. Average cost to set up a  global GaN HEMT market in the US, Europe and China?
    3. How many  global GaN HEMT markets are manufactured per annum globally? Who are the sub-component suppliers in different regions?
    4. What is happening in the overall public, globally?
    5. Cost breakup of a  global GaN HEMT market and key vendor selection criteria
    6. Where is the  global GaN HEMT market  manufactured? What is the average margin per equipment?
    7. Market share of  global GaN HEMT market manufacturers and their upcoming products
    8. The most important planned  global GaN HEMT market in next 2 years
    9. Details on network of major  global GaN HEMT market and pricing plans
    10. Cost advantage for OEMs who manufacture  global GaN HEMT market in-house
    11. 5 key predictions for next 5 years in  global GaN HEMT market
    12. Average B-2-B  global GaN HEMT market price in all segments
    13. Latest trends in  global GaN HEMT market, by every market segment
    14. The market size (both volume and value) of the global GaN HEMT market in 2022-2030 and every year in between?
    15. Global production breakup of  global GaN HEMT market, by suppliers and their OEM relationship
    Sl no Topic
    1 Market Segmentation
    2 Scope of the report
    3 Abbreviations
    4 Research Methodology
    5 Executive Summary
    6 Introduction
    7 Insights from Industry stakeholders
    8 Cost breakdown of Product by sub-components and average profit margin
    9 Disruptive innovation in the Industry
    10 Technology trends in the Industry
    11 Consumer trends in the industry
    12 Recent Production Milestones
    13 Component Manufacturing in US, EU and China
    14 COVID-19 impact on overall market
    15 COVID-19 impact on Production of components
    16 COVID-19 impact on Point of sale
    17 Market Segmentation, Dynamics and Forecast by Geography, 2022-2030
    18 Market Segmentation, Dynamics and Forecast by Product Type, 2022-2030
    19 Market Segmentation, Dynamics and Forecast by Application, 2022-2030
    20 Market Segmentation, Dynamics and Forecast by End use, 2022-2030
    21 Product installation rate by OEM, 2022
    22 Incline/Decline in Average B-2-B selling price in past 5 years
    23 Competition from substitute products
    24 Gross margin and average profitability of suppliers
    25 New product development in past 12 months
    26 M&A in past 12 months
    27 Growth strategy of leading players
    28 Market share of vendors, 2022
    29 Company Profiles
    30 Unmet needs and opportunity for new suppliers
    31 Conclusion
    32 Appendix
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