GLOBAL GaN HEMT MARKET
INTRODUCTION
Compared to comparable silicon-based alternatives, gallium nitride (GaN) based HEMTs have a faster switching speed, greater thermal conductivity, and lower on-resistance.
Field-effect transistors (FETs) called GaN HEMTs can switch more quickly than silicon power transistors.
GaN HEMTs’ tiny size and this feature enable the devices to be more energy-efficient while providing more room for external components.
GLOBAL GaN HEMT MARKET SIZE AND FORECAST
The global GaN HEMT market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
NEW PRODUCT LAUNCH
Transphorm Inc. is to announce that its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the sector to be JEDEC approved, has received Electronic Products’ Product of the Year Award.
Thousands of items released were appraised by the editors of Electronic Products, a top trade publication for electronic design experts. The winning products were chosen based on their creative designs, notable technological or application advancements, and significant pricing and performance achievements.
Based on its capacity to enable compact, less expensive power electrical systems and devices, such as power supplies and adapters, PV Inverters for solar panels, motor drives, and power conversion for electric vehicles, Transphorm’s TPH3006PS GaN demonstrated success in the “Discrete Semiconductor” category.
A highly effective GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V is Infineon’s CoolGaN.
GaN technology from Infineon, which has a wealth of experience in the semiconductor industry, helped the e-mode concept reach maturity through end-to-end production in large quantities.
Among all GaN HEMTs on the market, the leading quality guarantees the highest standards and provides the most dependable and effective solution.
Modern silicon devices are unable to take advantage of the increased power density and enhanced energy efficiency that CoolGaN offers switched-mode power circuits.
Switching speed is crucial in high-frequency activities, above 200-250 kHz, since it affects how energy is transferred. A very short dead-time is made possible by Infineon’s CoolGaN’s ultrafast switching speed.
Customers may rely on its dependability and quality as it has an anticipated lifetime of more than 15 years with a failure rate < 1 FIT
.Since Infineon’s CoolGaN transistors lack a body diode and minor carrier, they do not show reverse recovery. To achieve improved efficiency, for instance in datacenter and server power supply, in order to save energy and lower OPEX, hard-switching topologies like totem-pole PFC might be used
The 650V GaN (Gallium Nitride) HEMTs GNP 1070 TC-Z and GNP1150TCA-Z, which are optimised for a variety of power supply system applications, were just put into mass production by ROHM Semiconductor.
Together, Delta Electronics, Inc. and Ancora Semiconductors, Inc., a subsidiary that creates GaN devices, have developed these innovative products. A major obstacle to establishing a decarbonized civilization is increasing the efficiency of power sources and motors, which consume the majority of the world’s electricity.
Adoption of novel materials like GaN and SiC is essential for raising power supply efficiency. ROHM began mass producing 150V GaN HEMTs with an 8V gate breakdown voltage and developed control IC technology to enhance GaN performance.
In order to help a larger range of power supply systems operate more efficiently and with a smaller footprint, ROHM has produced 650V GaN HEMTs with market-leading performance.
In terms of RDS(ON) Ciss / RDS(ON) Coss, an indicator of the merit of GaN HEMTs, the GNP1070TC-Z and GNP1150TCA-Z offer industry-leading performance, resulting in increased efficiency in power supply systems.
The electrostatic breakdown resistance is increased up to 3.5kV at the same time by an integrated ESD protection device, increasing application reliability.
Further miniaturisation of auxiliary components is made possible by the high-speed switching properties of GaN HEMTs. With its EcoGaN range of GaN devices, ROHM keeps enhancing the performance of its products while also advancing their miniaturisation and energy application savings.
In addition to creating ROHM products, the company will encourage cooperative development through partnerships with other organisations in order to help address social problems by making applications more effective and compact.
The term EcoGaN describes the new GaN product range from ROHM. By maximising GaN properties, they aid in energy saving and miniaturisation by reducing application power consumption, producing smaller peripheral components, and creating designs that are easier to construct and have fewer moving parts.
Servers and AC adapters are just a couple of examples of consumer electronics that benefit greatly from the use of 650V GaN HEMTs GNP1070TC-Z and GNP1150TCA-Z.
Two additional 12.75–13.25 GHz (Low–Ku band) 70W (48.3dBm) gallium–nitride high–electron–mobility transistors (GaN HEMTs) will be introduced to the company’s GaN HEMT lineup for satellite–communication (SATCOM) earth stations, according to a statement from Mitsubishi Electric Corporation.
Increased data transmission capacity and smaller ground stations are supported even in the Low-Ku band by the two GaN HEMT products, one for multi-carrier1 communications and the other for single-carrier2 communications.
In addition to being increasingly used for satellite news gathering (SNG) by TV broadcasters in rural areas lacking fibre and/or cable networks, Ku-band satellite communication systems are also increasingly being used for emergency communications during natural disasters.
In order to satisfy the requirement for expanded data-transmission capacity, SATCOM earth stations are projected to employ the Low-Ku (13 GHz) band as well as the Ka (28 GHz) band in the near future. Currently, standard SATCOM systems operate on a 14 GHz spectrum.
Mitsubishi Electric has up till now provided a lineup of seven GaN HEMTs for both single-carrier and multi-carrier SATCOM ground stations.
Additionally supporting SNG and emergency communications in the Low-Ku band are the two new 70W GaN HEMTs that are currently available.
THIS REPORT WILL ANSWER FOLLOWING QUESTIONS
- How many GaN HEMT are manufactured per annum Globally? Who are the sub-component suppliers in different regions?
- Cost breakup of a Global GaN HEMT and key vendor selection criteria
- Where is the GaN HEMT manufactured? What is the average margin per unit?
- Market share of Global GaN HEMT market manufacturers and their upcoming products
- Cost advantage for OEMs who manufacture Global GaN HEMT in-house
- key predictions for next 5 years in Global GaN HEMT market
- Average B-2-B GaN HEMT market price in all segments
- Latest trends in GaN HEMT market, by every market segment
- The market size (both volume and value) of the GaN HEMT market in 2023-2030 and every year in between?
- Production breakup of GaN HEMT market, by suppliers and their OEM relationship
