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Gallium phosphide is a type III-V compound semiconductor in the semiconductor industry with a large indirect band gallium phosphide (gap) Wafers gap. This substance shares silicon’s crystal structure. Its electron and hole mobilities are roughly 100 and 75 cm2/V-s, respectively, and its lattice constant is 0.545 nm.
This substance has no smell and is insoluble in water. Numerous electrical devices, including as CMOS and RF/V/A switches, have been made using it.
Gallium phosphide’s main drawbacks are its expensive price and poor sensitivity. In addition, it is susceptible to thermal instability and tends to lose its brightness at high temperatures.
It has many benefits despite its low cost and limited sensitivity. For instance, it can be utilised in low-cost LEDs. It has great optical characteristics but a narrow temperature range. Additionally, it has no smell and is clear, making it appropriate for use in everything from domestic appliances to medical equipment.
The Global GaP wafers market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
E&M GaP Wafer’s provide 2″ and 3″ GaP wafers.Visual LEDs include display elements (red, green), LCD backlights (yellow, green), and other visible LEDs.Condensed Czochralski in Liquid (LEC)Gallium phosphide, also known as GaP, is an orange-yellow, semi-translucent substance that is created by the direct reaction of gallium and phosphide or by the reaction of oxide gallium and phosphide at temperatures between 900 and 1000C.
The melting point is 1465 degrees Celsius, the dielectric constant is 9.1 and the energy range is 2.2 eV. GaP can be used for display components of various visible light emmition diodes as well as lighting (yellow and green) of mobile phones since it shares semiconductor characteristics with other III-V compound materials.
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