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The technology known as gas cluster ion beams (GCIB) allows for surface alteration at the nanoscale. Without causing damage to the subsurface, it may smooth a wide range of surface material types down to the angstrom level of roughness. Surfaces can also be chemically modified through infusion or deposition.
A surface is subjected to a beam of high-energy, nanoscale cluster ions using GCIB. When a high pressure gas expands into a vacuum at around 10 atmospheres of pressure, the clusters are created (1e-5 atmospheres). As it cools and expands adiabatically, the gas condenses into clusters. The clusters are nanoscale pieces of crystalline matter with distinct properties that fall in between the atomic and solid state physics spectrums.
The expansion occurs inside a nozzle, which bends the gas flow and helps to generate a slender jet of clusters that travels along the nozzle’s axis of symmetry. The jet of clusters travels through differential pumping apertures into a high vacuum area (1e-8 atmospheres), where they collide with energising electrons to get ionised. The ionised clusters are electrostatically accelerated to high speeds and focussed into a narrow beam.
Global gas cluster ion beam system accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
An argon cluster ion source called the GCIB 10S has just been released by Oxford Instruments. It is made to be used with XPS and SIMS surface analysis equipment for cleaning and depth profiling of materials like organics, polymers, graphene, and delicate coatings. When high pressure gas expands into a vacuum, argon ion clusters are created. A mass filter can be used to choose from clusters that are Ar1 to > Ar3000 in size.
Sensitive materials have a history of suffering severe damage from conventional Ar1 Bombardment. These kinds of samples can now be analysed with little loss of chemical data.
The multi-mode gas cluster ion source (GCIS) can be used for depth profiling organic, inorganic, and metallic thin films as well as sputter cleaning in both Arn+ cluster and Ar+ monatomic modes. Additionally, it can be utilised to produce low energy He+ ions for ion scattering spectroscopy.
