Wide-band-gap semiconductors have the physical properties to revolutionise high-frequency solid-state power devices. The rapid development of GaN microwave transistors, for example, has opened up new possibilities for a variety of applications.
The AlGaN/GaN heterostructure enables the GaN-based HEMTs to form a high-electron-mobility transistor (HEMT), which has attracted the attention of many research groups around the world, resulting in tremendous progress as represented by a power density that is comparable to that of conventional GaAs field effect transistors.
Wide-band-gap semiconductors have gained prominence as a critical material for applications in high-performance optoelectronic and electronic devices, and they are of scientific and technological importance.
Because of its huge band-gap energy, wide-band-gap semiconductors have several advantages for optoelectronic and electrical applications.
The nature of wide-band-gap energy makes it excellent for absorbing or emitting ultraviolet (UV) light in optoelectronic applications. It usually has a chemically and mechanically stable structure that allows for a larger electric breakdown field and the ability to withstand hostile situations.
The Germany Wide Band Gap Semiconductor Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
Nexperia, a leading provider of critical semiconductors, has introduced 650 V, 10 A SiC Schottky diodes to the high-power Silicon Carbide (SiC) diode market. Nexperia is expanding its high-voltage wide bandgap semiconductor device offering in this strategic move. Nexperia is already a trusted supplier of efficient power Gallium Nitride (GaN) FETs.
Nexperia’s first SiC Schottky diode is an industrial-grade device with 650 V repeated peak reverse voltage (VRRM) and 10 A continuous forward current (IF), developed for power conversion applications that require ultra-high performance, high efficiency, and low energy loss.
It comes in a variety of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices, with the extra benefit of a high-voltage compatible real 2-pin (R2P) package with higher creepage distance.
On request, engineering samples are available, and a full product release is in the works. Nexperia intends to expand its SiC diode portfolio over time, resulting in a total of 72 devices functioning at voltages between 650 and 1200 V and currents ranging from 6 to 20 A.
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