GRAPHENE FIELD EFFECT TRANSISTORS MARKET

KEY FINDINGS

• The Global Graphene Field Effect Transistors Market is valued at $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
• Biological sensors and gas sensors are among new developments in the industry.
• Due to their better performance in RF-based applications, Graphene-based Field-Effect Transistors have a tremendous growth in recent times and they can even go beyond CMOS technology in the future 
• The market is currently in the research stage and commercialization is expected to begin in 2025-2026
• The demand for Graphene Field Effect Transistors is increasing today, and they are available in different specifications to fit the various application needs.
• The different types of GFET in sensors and electronics offer distinct advantages while helping enterprises build a device that can accommodate all of the features.
• The top 3 players in the Graphene Field Effect Transistors market are Graphena, Merck, and Sixth Element.
• None of the current large transistor players are in the market, but we can expect them to come in over the forecast period.
• G-FET has some outstanding physical properties like biocompatibility, excellent sensitivity, greater surface-to-volume ratio, greater mobility, less power consumption, etc. Hence they find applications in the design and development of gas sensors and DNA sensors.
• Graphene’s superior electrical and thermal conductivity results in low resistance losses and better heat dissipation than silicon. Consequently, graphene transistors have the potential to provide enhanced performance and efficiency. 
• The graphene is chemically functionalized with biomolecule receptors, such as antibodies or single-strand DNA probes, which can selectively bind to the target biomolecules in solution. The binding of target biomolecules to the graphene channel leads to a change in charge or electric potential at the G-FET surface, resulting in a charge carrier density and mobility variation within the G-FET, which leads to an electrical conductivity change associated with biomolecular binding events.
• Graphene, or single atomic thick carbon, is the first purely two-dimensional (2D) material to be obtained. Graphene is made up of carbon atoms that are bound to three others with a 120° bond angle, resulting in a hexagonal lattice arrangement of sp2-hybridized carbon. The 2D nature and hexagonal carbon arrangement are the basis of graphene’s high specific surface area (2630 m2/g), a trait that is particularly advantageous in biosensing applications.

INTRODUCTION TO THE GRAPHENE FIELD EFFECT TRANSISTORS MARKET

 A graphene channel sandwiched between two electrodes and a gate contact that modifies the channel’s electrical response makes up a graphene field effect transistor (GFET). To enable channel surface functionalization and receptor molecule binding to the channel surface, graphene is exposed. Using a field-effect transistor, the voltage on the gate of a transistor controls whether the other two terminals may conduct current or not (the source and drain).

Due to graphene’s greater electrical and thermal conductivity, it dissipates heat more effectively than silicon and with lower resistance losses. As a result, graphene transistors could offer improved performance and efficiency. The channel is entirely on the surface due to the structure’s one-atom thickness.  The gate, which is a chip component that turns transistors on and off, is a crucial measure of transistor size. In the past, gate lengths had already been reduced to less than one nanometer. The most recent work sets a new standard that will be difficult to match by reducing gate lengths to the size of a single atom.

For high-speed analog VLSI, RF, and biosensor circuits, G-FET is emerging as the best alternative to silicon due to factors like superior carrier mobility and very high trans-conductance gain, among others. Graphene is one such material. The Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), also known as Insulated-Gate Field-Effect Transistor (IGFET), are the two types of field-effect transistors.

There are several advantages to using GFET sensors with a 2D channel material over bulk semiconductor devices (including silicon). The response sensitivity of the majority of semiconductor transistor sensors is limited because changes in the local electric field at the surface of the channel have little effect deeper within the device channel.

GRAPHENE FIELD EFFECT TRANSISTORS MARKET SIZE AND FORECAST

The Global Graphene Field Effect Transistors market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

GRAPHENE FIELD EFFECT TRANSISTORS MARKET NEW PRODUCT LAUNCH

To minimize hurdles to graphene adoption, particularly in the market for sensors, Graphenea has started selling GFETs, or graphene field effect transistors.  Researchers no longer have to stress about continuously locating high-quality GFET devices for their applications, whether in gas or biosensing or for other purposes.

GET-S10 and GET-S20 are two common GFET-for-sensing configurations that Graphenea has first released. They both have 36 individual GFETs on one square centimeter die, but they have different device layouts. The GFET-S10 has devices equally spaced over the die, whereas the GET-S20 has devices concentrated in the die’s center and electrical pads near the edge.

In contrast to the GFET-S10, which contains 30 devices with the Hall bar geometry and 6 with the 2-probe geometry, the GFET-S20 devices all feature a 2-probe geometry for investigating electrical properties while sensing.

In addition to applications in graphene device development, bioelectronics, biosensing, chemical sensing, and photodetectors that the 2-probe geometry also permits, the Hall bars make magnetic field sensing possible.

Customers have the option of selecting a device layout that meets their needs. The new product is especially well suited for people who want to create unique graphene applications but lack the motivation or resources to do the extensive graphene research necessary to produce reliable, high-quality GFET devices.

Graphene makes a good sensor due to its 2D structure and superior electrical, optical, and mechanical capabilities.

The University of Manchester team’s ability to detect the adsorption of a single gas molecule was the most stunning example of the power of the sensor, while several other applications in chemical, biological, or magnetic sensors as well as photodetectors were also proven.

On a GFET platform, all of those ultrasensitive devices run. The new Graphenea devices have a defined carrier mobility above 1000 cm2/V*s, residual charge carrier density under 2 x 1012cm-2, a Dirac point between 10 and 40V, and a yield over 75%. The typical Si/SiO2 substrate is used to create the GFETs, and the metal contacts are Ni/Al.

Béraud, A graphene field effect transistor (GFET) has a gate contact that modulates the channel’s electronic response and consists of a graphene channel between two electrodes. By exposing the graphene, functionalization of the channel surface and receptor molecule binding to the channel surface are made possible.

The basic GFET has three terminals and shares some similarities with the conventional FET. It has a top or back gate, a drain, and a source. The GFET has a thin graphene channel between the source and drain metal electrodes, typically tens of microns thick, in contrast to a silicon-based transistor.

GRAPHENE FIELD EFFECT TRANSISTORS MARKET SEGMENTATION

By Geography

• North America
• Europe
• Asia
• Rest of the World

By Industry

• Electronics & communications 
• Chemical & biological 
• Other

By Application

• Optical communication
• Sensor applications
• Others

THE GRAPHENE FIELD EFFECT TRANSISTORS MARKET REPORT WILL ANSWER THE FOLLOWING QUESTIONS

1. How many Graphene Field Effect Transistors are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a  Global Graphene Field Effect Transistors and key vendor selection criteria
3. Where are the Graphene Field Effect Transistors manufactured? What is the average margin per unit?
4. Market share of Global Graphene Field Effect Transistors market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global Graphene Field Effect Transistors in-house
6. key predictions for the next 5 years in the Global Graphene Field Effect Transistors market
7. Average B-2-B Graphene Field Effect Transistors market price in all segments
8. The latest trends in the Graphene Field affect the Transistors market, by every market segment
9. The market size (both volume and value) of the Graphene Field Effect Transistors market in 2024-2030 and every year in between?
10. Production breakup of the Graphene Field Effect Transistors market, by suppliers and their OEM relationship