To control MOSFETs and IGBTs, half bridge gate driver ICs with shoot-through protection are used.
To drive the gates of high- and low-side N-channel MOSFETs (or IGBTs) with a low output impedance to reduce conduction losses and a quick switching time to reduce switching losses, one must use an isolated half-bridge driver.
To enable precise and effective switching, the timing characteristics of the high- and low-side drivers must be very closely matched.
By doing this, the dead time caused by the half bridge’s first switch shutting off before the second switch turns on is reduced.
The Global Half-Bridge MOSFET Driver market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The professionals prefer Infineon’s gate driver IC solutions. New silicon on insulator (SOI) gate driver ICs with high current (2.5 A) and low current (0.7 A) options are now available for 650 V half bridges.
These gate drivers are ideal for motor drives, home appliances, SMPS, battery-powered applications, and high power lighting because of their superior robustness and noise immunity.
A high-side low-side driver called 2EDL8x2x is intended for advanced switching converters, including those used in datacom and telecom applications.
In contrast to 2EDL812x, which uses differential input with built-in hysteresis for improved noise immunity, 2EDL802x accepts independent inputs with built-in hysteresis.
The system’s durability is guaranteed by the built-in shoot-through protection of the 2EDL812x. Volt-second balance is ensured and magnetic core saturation is avoided using a 6 ns maximum delay matching.
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