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The world’s fastest DRAM, high-bandwidth memory (HBM), was created for applications that require the highest feasible bandwidth between memory and computation. Stacks of memory chips come together to form a cube-like shape in the HBM.
The HBM is frequently referred to as stacked memory due to its look. Integrating TSV stacked memory die with circuitry in the same chip package results in high-speed performance.
The next-generation AI (Artificial Intelligence) systems, such as Deep Learning Accelerator and High-Performance Processing, which all require high levels of computing performance, benefit greatly from HBM2E’s high speed, high capacity, and low power features.
It is also anticipated that it will be used with the Exascale supercomputer, a high-performance computer system that is capable of carrying out calculations at extremely fast rates.
The Global HBM2e Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The top-tier semiconductor supplier in the world, SK hynix Inc., with headquarters in Korea, provides flash memory chips (NAND flash), CMOS image sensors (CIS), and dynamic random access memory (DRAM) chips for a variety of illustrious clients worldwide.
Based on the 3.6Gbps speed performance per pin, the HBM2E from SK Hynix supports 1,024 I/Os (Inputs/Outputs) and over 460GB per second.
With the ability to transfer 124 FHD (full-HD) movies per second, it is the fastest DRAM solution available in the market. By vertically stacking eight 16GB chips using TSV (Through Silicon Via) technology, the density is increased from the previous generation by more than twice to 16GB.
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