The need for effective and high-performing devices keeps growing in the field of contemporary electronics and power management.
The High-Voltage Metal-Oxide-Semiconductor Field-Effect Transistor (HV MOSFET) is a key element powering this invention.
By enabling higher-efficiency energy conversion, permitting high-voltage applications, and opening the door for advancements in power electronics, these potent devices have completely changed a number of industries.
It’s crucial to comprehend the fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) before diving into high-voltage MOSFETs.
A MOSFET is a three-terminal semiconductor device that uses an applied voltage at the gate terminal to control the flow of current between the source and drain terminals.
Based on the conductivity of the charge carriers, MOSFETs are often divided into two basic types: N-channel and P-channel.
Based on their breakdown voltage ratings, they can also be divided into low-voltage and high-voltage MOSFETs.
Due to their capacity to handle higher voltages, high-voltage MOSFETs have drawn a lot of interest.
This makes them appropriate for applications requiring power handling capacities that exceed those of conventional low-voltage MOSFETs.
These applications include a wide range of sectors, including aerospace, electric vehicles, renewable energy, power distribution, and more.
Key Characteristics and Benefits:
Uses for high-voltage MOSFETs:
In the world of contemporary electronics and power management, high-voltage MOSFETs have carved out a sizable niche.
They have opened up new opportunities in a variety of industries, including renewable energy, electric vehicles, aircraft, and more because of their capacity to manage high voltages effectively and dependably.
High-voltage MOSFETs are positioned to play a crucial role in determining the future of power electronics and energy conversion systems as technology develops.
The Global High Voltage Mosfet market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The STPOWER MDmesh M9 and DM9 N-channel super-junction, multi-drain silicon power MOSFETs from STMicroelectronics are perfect for switched-mode power supplies (SMPS) in applications ranging from flat-panel televisions to data centre servers and 5G infrastructure.
The 650V STP65N045M9 and the 600V STP60N043DM9 are the first products to be released.
Both feature low on-resistance (RDS(on)) per unit area, allowing for a device with a high power density and small overall dimensions.
The STP65N045M9 and the STP60N043DM9 both have the best maximum RDS(on) (RDS(on)max) in their respective categories, at 45m and 43m, respectively.
These devices feature the best RDS(on)max x Qg figure of merit (FoM) currently available, with a very low gate charge (Qg) of typically 80nC at 400V drain voltage.
In comparison to the older MDmesh M5 and M6/DM6 models, the gate-threshold voltage (VGS(th)), which is typically 3.7V for the STP65N045M9 and 4.0V for the STP60N043DM9, minimises the turn-on and turn-off switching losses.
A extremely low reverse recovery charge (Qrr) and reverse recovery time (trr), both of which are present in the MDmesh M9 and DM9 series, significantly enhance efficiency and switching performance.
The newest high-voltage MDmesh technologies from ST also have an extra platinum diffusion process that guarantees a quick intrinsic body diode.
When compared to prior methods, the peak diode-recovery slope (dv/dt) is larger.
The MDmesh DM9 technology’s devices are all incredibly durable and can resist dv/dt up to 120V/ns @ 400V.
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