CountryAfghanistanAlbaniaAlgeriaAndorraAngolaAntigua & BarbudaArgentinaArmeniaAustraliaAustriaAzerbaijanBahamasBahrainBangladeshBarbadosBelarusBelgiumBelizeBeninBhutanBoliviaBosnia & HerzegovinaBotswanaBrazilBruneiBulgariaBurkina FasoBurundiCambodiaCameroonCanadaCape VerdeCentral African RepublicChadChileChinaColombiaComorosCongoCongo Democratic RepublicCosta RicaCote d'IvoireCroatiaCubaCyprusCzech RepublicDenmarkDjiboutiDominicaDominican RepublicEcuadorEast TimorEgyptEl SalvadorEquatorial GuineaEritreaEstoniaEthiopiaFijiFinlandFranceGabonGambiaGeorgiaGermanyGhanaGreeceGrenadaGuatemalaGuineaGuinea-BissauGuyanaHaitiHondurasHungaryIcelandIndiaIndonesiaIranIraqIrelandIsraelItalyJamaicaJapanJordanKazakhstanKenyaKiribatiKorea NorthKorea SouthKosovoKuwaitKyrgyzstanLaosLatviaLebanonLesothoLiberiaLibyaLiechtensteinLithuaniaLuxembourgMacedoniaMadagascarMalawiMalaysiaMaldivesMaliMaltaMarshall IslandsMauritaniaMauritiusMexicoMicronesiaMoldovaMonacoMongoliaMontenegroMoroccoMozambiqueMyanmar (Burma)NamibiaNauruNepalThe NetherlandsNew ZealandNicaraguaNigerNigeriaNorwayOmanPakistanPalauPalestinian State*PanamaPapua New GuineaParaguayPeruThe PhilippinesPolandPortugalQatarRomaniaRussiaRwandaSt. Kitts & NevisSt. LuciaSt. Vincent & The GrenadinesSamoaSan MarinoSao Tome & PrincipeSaudi ArabiaSenegalSerbiaSeychellesSierra LeoneSingaporeSlovakiaSloveniaSolomon IslandsSomaliaSouth AfricaSouth SudanSpainSri LankaSudanSurinameSwazilandSwedenSwitzerlandSyriaTaiwanTajikistanTanzaniaThailandTogoTongaTrinidad & TobagoTunisiaTurkeyTurkmenistanTuvaluUgandaUkraineUnited Arab EmiratesUnited KingdomUnited States of AmericaUruguayUzbekistanVanuatuVatican City (Holy See)VenezuelaVietnamYemenZambiaZimbabwe
Multi User License - $2,500
Anti-radiation, high-frequency, high-power, and high-density integrated Electronic devices can all benefit from the wide band gap semiconductor material. It has outstanding anti-radiation and chemical stability, as well as high saturation electron drift speed and thermal conductivity.
It also has great electrical performance. In the third-generation wide-bandgap semiconductor semiconductors, SiC and GaN are relatively mature materials. In recent years, the “cores” of solid-state light sources, power electronics, and microwave radio frequency devices have been the rapidly developed wide-gap semiconductor materials represented by GaN and SiC.
In India, the SiC and GaN semiconductor industries have shown a favourable growth trend in recent years. Many businesses have expressed interest in investing in WBG semiconductor manufacturing projects in India, owing to rising market acceptability of WBG chips. WBG semiconductors can help with final system design in a variety of power applications.
The India Wide Band Gap Semiconductor Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
Silicon Power Corporation, based in Malvern, Pennsylvania, has constructed a SiC fabrication facility in Halol, Gujarat, India, providing new potential for the Indian electronics industry. The SiC facility is India’s first commercially available fabrication unit of its sort.
The opening of this new SiC fabrication facility would not only help India achieve its goal of developing a “Make in India” electronic products industry, but it will also lessen India’s reliance on imports, particularly from China. Not only will wafer manufacture take place in India, but every step of the process, from design to completion, will take place there as well. Wafer, packaging, and full device integration for a real Make in India device.
© Copyright 2017-2022. Mobility Foresights. All Rights Reserved.