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Power semiconductor electronics called integrated gate-commutated thyristors (IGCT) are utilized in industrial machinery to switch electric current. The gate turn-off (GTO) thyristor is involved.
Together with ABB, Mitsubishi developed it. The IGCT is a completely controlled power switch, meaning that its control terminal may turn it on and off, just like the GTO thyristor can (the gate).
The thyristor device is incorporated with the electronics for the gate drive. A specific kind of thyristor is an IGCT. The Gate Commutated Thyristor (GCT) wafer device and the gate unit are integrated to create it.
The quick commutation of the conduction current from the cathode to the gate is ensured by the intimate integration of the gate unit with the wafer device. Similar to a gate turn-off thyristor, the wafer device (GTO).
Most applications don’t require snubbers since they can be turned on and off by a gate signal and can endure higher rates of voltage rise (DV/DT).
A GTO thyristor and an IGCT have extremely similar structural characteristics. The gate turn-off current in an IGCT is higher than the anode current. As a result, minority carrier injection from the lower PN junction is completely eliminated, and turn-off times are shortened.
The two key differences are a smaller cell size and a gate connection that is far more substantial and has a significantly lower inductance in both the gate drive circuit and the drive circuit connection.
Regular wires cannot be used to link the gate drive to the IGCT due to the extremely high gate currents and quick dI/dt rise of the gate current. The device’s box includes a PCB for the drive circuit.
A sizable circular conductor that attaches to the edge of the IGCT is used, and the drive circuit encircles the device. The connection’s inductance and resistance are both reduced by the broad contact area and close proximity.
The IGCT can run at higher frequencies—up to several kHz for relatively brief periods of time—because its turn-off timings are far faster than those of the GTO. However, the normal working frequency is up to 500 Hz due to substantial switching losses [de].
The IGCT base substrate is made of silicon that has undergone neutron transmutation. IGT is vulnerable to cosmic rays when used in high-power applications. More n-base thickness is needed in order to reduce malfunctions caused by cosmic rays.
The Global Integrated Gate-Commutated Thyristors (IGCT) market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
All IGCTs Integrated Gate-Commutated Thyristors (IGCT) from Hitachi Energy are press-pack components. They are pressed into heat sinks that also act as electrical connections to the power terminals with a fair amount of force. The turn-on/off control unit for the IGCT is a crucial part of the part.
It just needs an external power source, and optical fiber connections make it simple to access its control features. The normal range of the device’s control power consumption is 10 to 100 W.
The IGCT has been calibrated for minimal conduction losses. It typically switches on and off at a frequency of 500 hertz or less. The maximum switching frequency, in contrast to the GTO, is solely constrained by operating thermal losses and the system’s capacity to dissipate this heat.
This function allows for brief on-off pulse bursts with switching frequencies of up to 40 kHz, which work in concert with the device’s quick flip between the on and off states.
