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Ion implantation, the general term for the use of accelerated ions to dope and modify semiconductor materials, is a key technology for the creation of integrated circuits (IC), which serve as the structural support for the advanced computing and global communications systems that have revolutionised modern life over the past 50 years.
Ion implanters were used by the semiconductor industry to make complementary metal-oxide-semiconductor (CMOS) transistors, which are now the most common type of IC device. Ion implanters were first used in the 1970s to precisely dope channel structures at doping densities of 10-4 monolayers to set the threshold conditions for transistor switching.
The Global Ion Implanter for Semiconductor market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
In order to manufacture ultrathin wafers for power devices, ULVAC, Inc. has begun selling the “SOPHI-30” low-acceleration ion implanter and the “SOPHI-400” high-acceleration ion implanter.
“SOPHI-30” is a high-concentration, low-acceleration ion implanter that achieves extremely high productivity by cutting the process time to 1/60. “SOPHI-400” is a high-acceleration ion implanter that performs the process with acceleration voltage up to 2.4MeV while lowering drive power loss and boosting switching speed.
One wafer may be processed with the same recipe in SOPHI-30 in 10 seconds, processing one-sixtieth as many wafers as prior ULVAC models could be processed in the same amount of time. The footprint is also reduced by two-thirds (in comparison to ULVAC previous models).
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