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As the price of oil and gas continues to rise, decreasing energy use has become even more important. Power semiconductors are the focus of one major Japanese endeavour.
There are two types of semiconductor materials: broad band gap and small band gap. A wide band gap semiconductor is defined as a semiconductor with a band gap width more than or equal to 2.3 eV. GaN, SiC, AlN, and aluminium gallium nitride are examples of representative materials (AlGaN).
The Japan Wide Band Gap Semiconductor Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
NEDO, Japan’s New Energy and Industrial Technology Development Organization, is leading a project targeted at lowering the cost of mass-producing silicon carbide (SiC) power semiconductors to the same level as ordinary silicon-based chips while minimising energy loss in power management devices. It also wants to make better gallium nitride (GaN) devices.
Electric vehicles, renewable energy, factory automation, computers and telecom equipment, data centres, air conditioning, lighting, consumer electronics, and, don’t forget, aerospace and defence should all benefit from this.
Rohm is the leading producer of SiC power semiconductors in Japan, as well as the SiC wafers on which they are produced, through its German subsidiary SiCrystal. Rohm recently established a new factory in Japan that will allow the company to more than fivefold its SiC power semiconductor manufacturing in the next five years. Rohm will focus on industrial equipment in the NEDO project.
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