When the output ac power is greater than the input ac power, the transistor can be used as an amplifier. The applied DC power is the element that allows an ac power output to be higher than the input ac power. Applications such as battery chargers, power supplies, and lights are perfect for high voltage power bipolar transistors with a voltage rating of 500 V to 1000 V.
The Global Low Frequency High Power Transistor market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The brand-new GaN-on-SiC transistors combine a high power density with a robust design and a frequency response that is remarkably flat over a wide bandwidth.
Each one has been input-matched to maximise the working frequency range and is capable of withstanding a VSWR (voltage standing wave ratio) of more than 20:1 with 3dB overdrive without degrading.
Additionally, they are a part of the NXP Product Longevity Programme. They can nearly cover all frequencies utilised by radios or the lower-frequency components of electronic systems thanks to the transistors’ extensive frequency range from HF to S-band.
As a result, fewer RF power transistors are needed to construct an amplifier with a given RF output level, resulting in a smaller amplifier and lower cost of production.
They can provide better robustness, a wide operational bandwidth, and great efficiency with their new GaN transistors, which meet these specifications. The new transistors are a part of NXP’s growing line of RF power transistors that are appropriate for HF, VHF, UHF, and L-band radar, IFF transponders, and avionics systems used in defence applications.
NXP also provides more than 40 LDMOS transistors with RF output powers up to 1500W, covering a frequency range of 1-3000MHz in addition to GaN devices. At the IEEE International Microwave Symposium (IMS2016) in San Francisco NXP displayed the latest GaN-on-SiC transistors in booth 1839. The six new transistors are either being produced or sampled.
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