The most advanced, high-performing medium-current ion implanter that strives for the best implantation quality possible.
High current ion beam currents up to 30 mA, high energy ion energies over 200 keV and up to 10 MeV, and very high dose efficient implant of dosage larger than 10 16 ions/cm 2 are the general categories for accelerator systems for ion implantation.
Ion implantation with medium energy: 300 keV to 50 MeV Typically, medium-energy ion beam accelerators like Van de Graaff or pelletron accelerators are used to produce and accelerate medium-energy ions.
Ion implantation is a low-temperature method of altering a solid target’s physical, chemical, or electrical properties by accelerating ions of one element into the target. Ion implantation is employed in the production of semiconductor devices, metal finishing, and materials science research.
If the ions stop and stay in the target and have a different composition from the target, they can change the elemental composition of the target. When ions strike a target with high energy during ion implantation, chemical and physical changes are also induced. The energetic collision cascades have the potential to damage or even destroy the target’s crystal structure, and ions with enough energy can lead to nuclear transmutation.
The Global medium-current ion implanter market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The 300mm version of Axcelis Technologies Inc.’s medium-current ion implanter, the MC3, was released a few weeks ago, and the company claims it can reduce die production costs by up to few percent.
The new tool, which is based on the 8250HT, the company’s 200mm tool, is designed for device features as small as 0.10 micron. The MC3 was created by Axcelis in collaboration with its Japanese partner.
According to Axcelis, the MC3’s key technologies are evolutionary and have been transferred from its 200mm platforms to a 300mm tool after being proved in production.
Many customers praise the dependability of their new (300mm) tools.They are able to extend these beam-line and wafer-handling technologies to 300mm wafers.
The firm’s unique constant focal-length wafer-scanning method is included in the MC3. According to Axcelis, this method maintains the ion beam’s focal point evenly spaced at all spots across the wafer, regardless of the angle. The MC3 is hence perfect for high-tilt implant situations.
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