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Last Updated: Apr 25, 2025 | Study Period: 2024-2030
An integrated circuit that operates at microwave frequencies is called a monolithic microwave integrated circuit, or MMIC. These devices often carry out tasks including high-frequency switching, low-noise amplification, power amplification, and microwave mixing. On MMIC devices, inputs and outputs are usually matched to a particular impedance.
They are now simpler to utilise because cascading no longer needs an external matching network. The majority of microwave test equipment is also built to function in a variety of environments.Due to MMICs' tiny dimensions and ability to be mass-produced, high-frequency devices like mobile phones have become increasingly common.
Initially, gallium arsenide compound semiconductor was used to create MMICs. It has two key advantages over silicon: a substrate that is semi-insulating and the typical material for IC realisation device (transistor) speed.
The design of high-frequency circuit functions is aided by both elements. However, as transistor feature sizes have shrunk, the speed of Si-based technologies has continuously increased, and MMICs can now also be manufactured in Si technology.
Si technology's main benefit is that it is less expensive to fabricate than GaAs. Because silicon wafer widths are greater and wafer prices are lower, ICs are less expensive.
The Global Monolithic Microwave Integrated Circuit (MMIC) Amplifiers market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The market will be propelled by rising bandwidth demands across several industries, rising worldwide digitalization via an increase in wireless communication applications, as well as evolution and rollout. They are also frequently used in the smartphone business, thus the market as a whole should be expanding quickly.
Additionally, MMICs are being employed more frequently because to their low cost and high precision characteristics in aerospace applications, which has led to an increase in international space programmes.
The industry is expanding quickly because of the sharp increase in military defence spending worldwide. MMICs are employed in this sector for a variety of purposes, including radar, fighter jets, and missile guidance systems.
DRDO-developed monolithic microwave integrated circuits on board EOS04 satellite. The Indian Space Research Organisation, the Defence Ministry, launched the EOS04 satellite with monolithic microwave integrated circuits on board.The satellite's radar imaging modules have made use of the circuits.
Monolithic microwave integrated circuits (MMICs) were created by the Defence Research and Development Organisation (DRDO) and utilised in the radar imaging satellite modules of EOS 04, which was launched by ISRO on February 14.
Numerous Monolithic Microwave Integrated Circuits (MMIC) were created at the DRDO's Gallium Arsenide Enabling Technology Centre (GAETEC) and Solid State Physics Laboratory (SSPL).
Monolithic Microwave Integrated Circuits (MMICs) for the Ka-Band Front End and Transmit/Receive (T/R) Modules Gallium nitride monolithic microwave integrated circuit (MMIC) technology has superior performance in power amplifier applications, as well as for low-noise amplifiers with high dynamic range and the capacity to withstand large, potentially harmful input power levels without the need for additional limiters at the system level.
For use in sensors, communications, networking, and electronic warfare (EW), the Army Research Laboratory (ARL) of the US Army Combat Capabilities Development Command has been researching and developing effective broadband high-power amplifiers.
Using the high-performance 0.15-m gallium nitride (GaN) fabrication method developed by Qorvo Inc., ARL submitted designs for Ka-band low-noise amplifiers (LNAs), power amplifiers (PAs), and transmit/receive (T/R) switches.
A recent ARL Qorvo Prototype Wafer Option (PWO), which produces a variety of designs from two complete 4-inch GaN wafers, included the fabrication of these amplifiers as one- and two-stage designs as well as integrated T/R modules for bidirectional transceivers.
This study records the testing and evaluation of these designs as well as the lessons discovered that can be used to future design projects.
The LNA is a crucial part of a Ka-band transceiver and, when made of GaN, has the extra benefits of large dynamic range and reliable resistance to high-power interference signals. These LNAs were made with a several gigahertz bandwidth target centered at 28 GHz in mind.
Using the few devices in the process design kit (PDK) that had noise data, several matching topologies, stabilizing techniques, and trade-offs of gain versus noise figure were investigated for two high-electron-mobility transistor (HEMT) sizes at biases of 5V or 10.
Although these devices may operate at biases ranging from 5V to 28V, their targeted optimal performance is at 10V with a typical drain current of 100 mA/mm.
The first stage of the LNAs' two-stage amplifier design was optimised for low noise figure. The first stages were constructed as test circuits for evaluating and testing the two-stage LNAs even though they were not intended for best use as a standalone amplifier.
Each design, which traded off stability, noise figure, return loss, and gain, was based on a 4- and 6-m HEMT. When compared to a possible wider band gain with the smaller HEMT size, the bigger 6- by 25-m LNA design first appeared to be a narrower band stable solution, but with a riskier tradeoff of stability versus stability.
Sl no | Topic |
1 | Market Segmentation |
2 | Scope of the report |
3 | Abbreviations |
4 | Research Methodology |
5 | Executive Summary |
6 | Introduction |
7 | Insights from Industry stakeholders |
8 | Cost breakdown of Product by sub-components and average profit margin |
9 | Disruptive innovation in the Industry |
10 | Technology trends in the Industry |
11 | Consumer trends in the industry |
12 | Recent Production Milestones |
13 | Component Manufacturing in US, EU and China |
14 | COVID-19 impact on overall market |
15 | COVID-19 impact on Production of components |
16 | COVID-19 impact on Point of sale |
17 | Market Segmentation, Dynamics and Forecast by Geography, 2024-2030 |
18 | Market Segmentation, Dynamics and Forecast by Product Type, 2024-2030 |
19 | Market Segmentation, Dynamics and Forecast by Application, 2024-2030 |
20 | Market Segmentation, Dynamics and Forecast by End-use, 2024-2030 |
21 | Product installation rate by OEM, 2023 |
22 | Incline/Decline in Average B-2-B selling price in the past 5 years |
23 | Competition from substitute products |
24 | Gross margin and average profitability of suppliers |
25 | New product development in past 12 months |
26 | M&A in past 12 months |
27 | Growth strategy of leading players |
28 | Market share of vendors, 2023 |
29 | Company Profiles |
30 | Unmet needs and opportunity for new suppliers |
31 | Conclusion |
32 | Appendix |