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An ON and Off switching control component for external N-channel MOSFETs is a MOSFET Gate Driver IC. In order to quickly and thoroughly switch the gate of a MOSFET, a MOSFET driver IC converts TTL or CMOS logical signals to a higher voltage and greater current.
A small-signal logic level MOSFET can normally be driven via a microcontroller’s output pin.
The global MOSFET gate driver IC market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The TCK42xG Series of MOSFET gate driver ICs from Toshiba Electronic Devices & Storage Corporation (“Toshiba”) now includes five new products for mobile devices like wearables. The latest additions to the series have an overvoltage lockout feature and regulate the gate voltage of an external MOSFET in accordance with the input voltage.
The “TCK421G” for 20V power lines is the first item in Toshiba Electronic Devices & Storage Corporation’s new “TCK42xG Series” of MOSFET gate driver ICs. Devices in the series contain an overvoltage lockout feature and are specialised to controlling the gate voltage of an external N-channel MOSFET based on input voltage.
The new IR2180 Series of 600V MOSFET and IGBT gate-driver ICs was released by International Rectifier Corp. The new ICs can be used in applications with a power output of up to 12kW. The smallest 600V gate drivers in the market, according to IR, are part of the new series.
They come in an eight-lead SOIC or PDIP package and are rated for 1.4A pull-up and 1.8A pull-down output source/sink current.
