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In a nanocrystal memory, information is stored in the nanocrystals by adding (removing) charges, therefore a transistor requires a higher (lower) voltage to turn it on, which is referred to as the programme (erase) operation.
By using a read voltage (Vread) on the gate in between programme and erase operations to read the matching drain current, it is possible to establish whether a digital memory is in the “0” or “1” state.
Commercially viable examples of nanocrystal flash memory include the 4 MB nanocrystal memory made by Numonyx and Freescale, as well as their 90 nm node embedded nanocrystal flash memory and 128 KB NOR split gate nanocrystal memory.
The Global Nanocrystal memory market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Development of a high density (1 1012 particles/cm2) all-solution processed nanocrystal memory with a homogeneous HfO2 matrix and Au-SiO2 core-shell nanoparticles (NPs).
The spin-on sol-gel method was used to create high-quality HfO2 high-oxide on a silicon substrate, consisting of extremely thin (10 nm) tunnel and control oxide layers.
In addition, the solution technique was used to create the Au-SiO2 core-shell nanocomposite with 3-aminopropyltrimethoxysilane (APTMS) acting as a functional mediator.
This APTMS does two tasks: it acts as a binder to adhere colloidal Au NPs to the HfO2 substrate and it creates a shield to protect the Au NP core. Through the layer-by-layer self-assembly monolayer (SAM) technique with a self-limiting feature, the APTMS shell layer was well regulated.
It thermally disintegrated into a sub-nanometer thick SiO2 shell through post-deposition annealing, which was crucial in overcoming the HfO2 shortage for the usage of the tunnel oxide and the control oxide in the nanocrystal memory.
The application of a crystalline HfO2 nano-film for an electrical device was effectively enhanced by this method. A high-performance nanocrystal memory was created by carefully combining the solution processes for the Au-SiO2 core-shell NPs and the HfO2 oxide layer.
To cover the NPs in oxide with nanoscale thickness, high coverage, and nanoscale homogeneity is a challenge for film deposition processes. Additionally, the chemical solutions used to create colloidal core-shell nanoparticles are frequently complex and contain anionic surfactants.
