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Because of their higher bandgap, wide bandgap semiconductors differ greatly from typical semiconductors. The energy differential between the top of the valence band and the bottom of the conduction band in semiconductors is referred to as a bandgap.
Wide bandgap semiconductor power devices can operate at greater voltages, temperatures, and frequencies due to the longer distance.
The North America Wide Band Gap Semiconductor Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
Gallium nitride (GaN) wafers, also known as large-area tailored substrates, developed by the US Naval Research Laboratory have the potential to replace silicon semiconductors in microelectronics, notably in power electronics. GaN Wide Bandgap Semiconductor for 1200V and Beyond Power Switches is Now Commercially Available for 200 mm Large Scale Manufacturing.
It’s also a good light emitter and a lightning-fast switch for high-frequency applications, but we’re more interested in high-voltage, high-electric-field devices.Because of the huge GaN designed substrate wafer diameter, more feasible GaN devices may be manufactured per wafer, resulting in decreased manufacturing costs.
QROMIS, Inc., situated in the Silicon Valley, is the eventual recipient of the transferred technology. QROMIS used these solutions to develop QST substrates and GaN-on-QST epi wafers, which are now commercially available. Industry and NRL collaborations have aided in the successful creation and transfer of technology that will tremendously assist the Navy and Marine Corps.
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