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Edge computing and data storage, UPS, high-intensity discharge (HID) lamps, fluorescent ballast lighting, solar inverters, welding equipment, induction heating, motor drives, and battery chargers are a few examples of typical uses for this device.
Particularly in half- or full-bridge switching topologies, the intrinsic fast body diodes of MOSFETs exhibit exceptionally gentle recovery properties, decreasing electromagnetic interference (EMI).
The body diodes can be used to ensure that all the energy is eliminated during high-speed switching with a low reverse recovery charge and time in order to prevent device failure and achieve high efficiency.
The Global Power MOSFET With Fast Body Diode market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
These new devices, like earlier Ultra Junction MOSFETs from IXYS, were created using a unique process method that produces Power MOSFETs with much lower on-resistance and gate charge.
Additionally, they have better dv/dt performance and are avalanche rated. They can be used in parallel to operate to larger current demands because of the positive temperature coefficient of their on-state resistance.
For use in telecom, industrial, and computing applications, Vishay Intertechnology, Inc. has unveiled a new fourth-generation 600 V EF Series fast body diode MOSFET in the low-profile PowerPAK 10 x 12 packaging.
The n-channel SiHK045N60EF from Vishay Siliconix covers all phases of power conversion, from high voltage inputs to the low voltage outputs needed to power the newest high-tech devices, while reducing on-resistance by 29% and delivering a gate charge that is 60% lower.
