GLOBAL RAD-HARD DISCRETE POWER DEVICE MARKET

INTRODUCTION

 Radiation hardening is used to produce electrical components for discrete power devices. Typically, insulating substrates like SOI (Silicon on Insulators) and SOS (Sapphire) are employed. The hardened components are specifically designed to withstand potentially harmful radiations (radiation immunity), which is a critical issue when designing components for artificial satellites, spacecraft, military aircraft, nuclear power plants, nuclear weapons, and other computing devices.

GLOBAL RAD-HARD DISCRETE POWER DEVICE MARKET SIZE AND FORECAST

The Global Rad-Hard Discrete Power Device market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.

RECENT DEVELOPMENT

STMicroelectronics has updated its line of radiation-hardened power devices approved for use in space applications by introducing new ESCC (European Space Components Coordination) qualified 200V and 400V power rectifiers and SEB-immune Schottky rectifiers at 45V and 150V. The 61MeV/cm2/mg linear energy transfer rad-hard Schottky diodes are available in 45V and 150V devices (LET).

These are the first Schottky devices on the market to be SEB-rated, and they can be used in a variety of converter topologies. Direct connection to satellite power buses at 100V and 28V is possible for the 150V and 45V equipment. At 40A/125°C and maximum forward voltage (VF) of 0.78V for the 150V devices. 

The 45V devices have a 0.61V maximum VF.The STPS40A45C, which comes in a TO-254AA through-hole package and has a 45V/2x20A diode inside, is one of five dual common-cathode Schottky parts that ST is releasing in total.

The SMD-packaged STPS80A45C, STPS60A150C, and STPS80A150C, each containing a diode rated for 45V/2x40A and 150V/2x30A, respectively. 5 surface-mount devices with hermetic seals. Presented in TO254AA, the STPS40A150C 150V/2x20A. 

A total ionising dose (TID) of up to 3 Mrad can be withstood by ST's new rad-hard rectifiers and Schottky diodes, according to characterization (Si). A single device type can be used for a variety of various power-supply designs, making it simple and convenient.

The voltage drop is guaranteed for four values of running current. The devices are produced at ST's Rennes, France, facility using the same planar technology as ST's AEC-Q101 automotive-qualified products, providing exceptional quality assurances.

COMPANY PROFILE

• IBM Corp
• Infineon Technologies
• HEICO Corporation
• Anaren Inc
• Texas Instruments

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many Rad-Hard Discrete Power Devices  are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global Rad-Hard Discrete Power Device  and key vendor selection criteria
3. Where is the Rad-Hard Discrete Power Device  manufactured? What is the average margin per unit?
4. Market share of Global Rad-Hard Discrete Power Device  market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global Rad-Hard Discrete Power Device  in-house
6. key predictions for next 5 years in Global Rad-Hard Discrete Power Device  market
7. Average B-2-B Rad-Hard Discrete Power Device  market price in all segments
8. Latest trends in Rad-Hard Discrete Power Device  market, by every market segment
9. The market size (both volume and value) of the Rad-Hard Discrete Power Device  market in 2023-2030 and every year in between?
10. Production breakup of Rad-Hard Discrete Power Device  market, by suppliers and their OEM relationship