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The serial NOR flash and EEPROM memories, which are less radiation-tolerant and use more power from the satellite’s solar panels, could be replaced with the rad-hard FRAM. The 2-MB FRAMs can be utilized for continuous, mission-critical data backup, telemetry, command, and control data logging, as well as data storage.
In order to combat radiation, the rad-hard by process technique creates transistor bodies that are less susceptible to its deteriorating effects.
Rapid Application Development, or RAD, is a method of software development that relies on prototyping without any predetermined planning. Less emphasis is placed on planning in the RAD paradigm and more emphasis is placed on the development tasks. It aims to create software in a short amount of time.
The Global Rad hard FRAM market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
SPI FRAM from Infineon is designed for harsh conditions.For space applications, the new devices are more energy-efficient than non-volatile EEPROM and serial NOR Flash devices.
The benefits of almost limitless endurance, instant non-volatile write technology, and over 100-year data retention are now available to space applications thanks to the inclusion of a QML-V rated F-RAM to Infineon’s memory portfolio.
The first member of their family of rad hard non-volatile F-RAMs is the 2 Mb density F-RAM with SPI. With 10 trillion read/write cycles and 120 years of data retention at 85°C and an operating voltage range of 2.0 V to 3.6 V, the devices offer practically limitless endurance with no wear leveling.
The lowest programming voltage is 2 V, and the lowest running current is a maximum of 10 mA.
The rad hard F-RAMs are also appropriate for avionic and other applications that need to operate in temperatures that meet military standards and range from -55°C to 125°C.
