By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Coming Soon
The ability of electronic components to protect themselves against radiation in their working surroundings is known as radiation tolerance. Transistors, resistors, diodes, capacitors, integrated circuits, sensors, and SoCs are among the common electronic components that make up these devices.
In hostile environments like space, nuclear power plants, particle accelerators, or during nuclear accidents or nuclear warfare, high-energy electromagnetic radiation or particle radiation can cause ionising radiation to harm the majority of electronic components and gadgets. Ionizing radiation flows through semiconductors by way of high-energy electromagnetic radiation or particle radiation.
Ionization and atomic displacement result from the radiation energy being transmitted to the semiconductor’s electrons and nucleus and rupturing chemical bonds. Electronic components’ properties are altered by ionisation and atomic displacement, which in some situations even results in component damage.
The Global Radiation tolerant connector Market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The boot configurations for pace-grade field-programmable gate arrays must be stored in dependable, high-density non-volatile memories. a subsidiary of Infineon Technologies AG, launched the Global Radiation tolerant connector first certified to MIL-QML-V PRF-38535’s flow in response to the growing need for high-reliability memories. The highest quality aand reliability standard certification for aerospace-grade ICs is the QML-V flow.
The excellent, low-pin count, single-chip RadTol NOR Flash non-volatile memories from Infineon are ideal for applications including FPGA setup, image storage, microcontroller data storage, and boot code storage.
When employed at higher clock rates, the devices’ data transfer capabilities match or even surpass those of conventional parallel asynchronous NOR Flash memories while significantly lowering the number of pins required. The gadgets can withstand radiation exposure of up to 125 krad unbiased and 30 krad biassed.
The devices can retain data for 1,000 Program/Erase cycles at 125 °C and for 10,000 Program/Erase cycles for 250 years at 85 °C. The RadTol 256 Mb quad-SPI and 512 Mb dual quad-SPI NOR Flash was created by Infineon, a pioneer in space-grade memory devices, using the 65 nm floating gate Flash process technology.
Both have an SDR interface speed of 133 MHz. The 512 Mb device consists of two separate 256 Mb devices that can be placed side by side in a single package. This gives designers the freedom to operate the device independently on either die in dual QSPI or single QSPI mode, giving them the connector option to use the second die as a backup.
