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The raw materials lignin-phenolic resin (LPR) and silicon powder were used to create silicon carbide (SiC) nanowires. Scanning electron microscopy, transmission electron microscopy, and X-ray diffraction were used to analyse the morphology and architectures of the nanowires.
Due to all of these advantages, silicon nanowires are interesting for use as field-effect transistors, metal-insulator semiconductors, nanoelectronic storage devices, biological sensors, chemical sensors, logic devices, and flash memory.
Electronics applications for nanowires may be the most obvious. Due to some nanowires’ exceptional conductivity of semiconductor properties, manufacturers might pack millions of transistors onto a single CPU thanks to their extremely small size. The consequence would be a sharp improvement in computer speed.
The Global Silicon carbide Nanowire Market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
SiC nanowires (NWs) combine the characteristics of SiC with those of 1D materials, and devices based on SiC NWs would offer real benefits. The project’s primary goal is to advance the technology of SiC nanowire field effect transistors (NWFETs) and show off devices that are appropriate for two application areas.
More Moore: Applications of logic. SiC NWFETs have the potential to operate at high temperatures and ultimately to dissipate power effectively, which means they can address key difficulties in semiconductor device scaling.Applications for biosensors go beyond Moore.
Due to SiC’s greater chemical stability and biocompatibility, SiC NWFET-based biosensors can function with difficulty.
A top-down technological method (lithography and plasma etching) will be used to acquire the right material quality (residual doping lower than 1E17 cm-3, same carrier mobility as bulk material, and if possible, in-situ doping for channel and contact regions).
The SiC NWFETs’ desired performance includes operating at 200 oC, having an Ion/Ioff ratio above 1E6, having a subthreshold swing below 200 mV/decade, and having an electron channel mobility above 200 cm2V-1s-1.
While these electrical qualities can be relaxed for biosensor applications, they are sufficient for logic applications and satisfy their needs.
To achieve this, a significant portion of the effort will be devoted to researching the appropriate functionalization techniques for SiC NW surfaces and the resistance of these surfaces to various aqueous solutions.
While industrialization-related concerns will be researched by a partner organisation (CEA-LETI), the primary research will be done at INPG.
