SILICON CARBIDE NANOWIRE MARKET

INTRODUCTION

The raw materials lignin-phenolic resin (LPR) and silicon powder were used to create silicon carbide (SiC) nanowires. Scanning electron microscopy, transmission electron microscopy, and X-ray diffraction were used to analyse the morphology and architectures of the nanowires.

Due to all of these advantages, silicon nanowires are interesting for use as field-effect transistors, metal-insulator semiconductors, nanoelectronic storage devices, biological sensors, chemical sensors, logic devices, and flash memory.

Electronics applications for nanowires may be the most obvious. Due to some nanowires' exceptional conductivity of semiconductor properties, manufacturers might pack millions of transistors onto a single CPU thanks to their extremely small size. The consequence would be a sharp improvement in computer speed.

SILICON CARBIDE NANOWIRE MARKET SIZE AND FORECAST

The Global Silicon carbide Nanowire Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

SILICON CARBIDE NANOWIRE MARKET RECENT DEVELOPMENT

SiC nanowires (NWs) combine the characteristics of SiC with those of 1D materials, and devices based on SiC NWs would offer real benefits. The project's primary goal is to advance the technology of SiC nanowire field effect transistors (NWFETs) and show off devices that are appropriate for two application areas.

More Moore: Applications of logic. SiC NWFETs have the potential to operate at high temperatures and ultimately to dissipate power effectively, which means they can address key difficulties in semiconductor device scaling.Applications for biosensors go beyond Moore.

Due to SiC's greater chemical stability and biocompatibility, SiC NWFET-based biosensors can function with difficulty.

A top-down technological method (lithography and plasma etching) will be used to acquire the right material quality (residual doping lower than 1E17 cm-3, same carrier mobility as bulk material, and if possible, in-situ doping for channel and contact regions).

The SiC NWFETs' desired performance includes operating at 200 oC, having an Ion/Ioff ratio above 1E6, having a subthreshold swing below 200 mV/decade, and having an electron channel mobility above 200 cm2V-1s-1.

While these electrical qualities can be relaxed for biosensor applications, they are sufficient for logic applications and satisfy their needs.

To achieve this, a significant portion of the effort will be devoted to researching the appropriate functionalization techniques for SiC NW surfaces and the resistance of these surfaces to various aqueous solutions.

While industrialization-related concerns will be researched by a partner organisation (CEA-LETI), the primary research will be done at INPG.

SILICON CARBIDE NANOWIRE MARKET COMPANY PROFILES

• Alfa Chemistry
• Novarials Corporation
• Nanochemazone
• PlasmaChem GmbH
• ACS Material LLC

THIS SILICON CARBIDE NANOWIRE MARKET REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many Silicon carbide Nanowires are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global Silicon carbide Nanowire and key vendor selection criteria
3. Where is the Silicon carbide Nanowire manufactured? What is the average margin per unit?
4. Market share of Global Silicon carbide Nanowire market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global Silicon carbide Nanowire in-house
6. key predictions for next 5 years in Global Silicon carbide Nanowire market
7. Average B-2-B Silicon carbide Nanowire market price in all segments
8. Latest trends in Silicon carbide Nanowire market, by every market segment
9. The market size (both volume and value) of the Silicon carbide Nanowire market in 2024-2030 and every year in between?
10. Production breakup of Silicon carbide Nanowire market, by suppliers and their OEM relationship