Global Silicon Carbide Substrate Market 2024-2030

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    High-power devices are best made using silicon carbide (SiC). Silicon is the first-generation fundamental component used in the semiconductor industry. At the moment, silicon is used as a substrate in the production of more than 95% of integrated circuit components worldwide.


    Carbon and silicon combine to form silicon carbide, usually referred to as carborundum. A new material for use in semiconductor devices is silicon carbide, which is a semiconductor material.


    Sintering is a process that bonds silicon carbide grains together to create extremely hard ceramics, which are frequently used in high endurance applications including vehicle brakes, car clutches, and ceramic plates in bulletproof vests.  The Lely process can be used to create large silicon carbide single crystals, and these crystals can then be carved into gems called synthetic moissanites.




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    The Global Silicon carbide substrate market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.



    A new Silicon Carbide Schottky diode has been released by Microsemi Corp, a well-known pro ducer of silicon mixed signal and discrete products.  It is offered in the firm’s unique low profile Powermite container.


    The UPSC148 is a low profile, 1mm high Powermite package from Microsemi that houses a 1 Amp, 480 Volt Silicon Carbide Schottky.


    Schottky devices are typically available up to 100 Volts. The company is able to produce high voltage effective Schottky devices thanks to the features of silicon carbide for high speed switching and power supply applications in telecommunications and implantable medical technology.


    The product was created in response to the company’s statement  that it will broaden its discrete product line to include discrete Silicon Carbide semiconductors through a partnership with sterling semiconductor.



    A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates.Various silicon carbide (SiC) polytypes, including 4H-, 6H-, and 3C-SiC, are developing as appealing photonic materials in the semiconductor microelectronics sector for power devices.


    SiC has a broad band gap energy range ranging from 2.3 eV (3C-) to 3.2 eV (4H-), providing a large clear window and excluding nonlinear two-photon absorption for light in the near-infrared telecommunications bands.


    These materials have non-vanishing second-order nonlinear optical susceptibilities due to the non-centrosymmetric lattice structures of SiC, which is promising for nonlinear and quantum photonics.


    Furthermore, as compared to other nonlinear photonic materials such as LiNbO3 and AlGaAs, the sulphur hexafluoride (SF6)-based dry etching procedure of SiC and the consequent Si-/C- etching by-products offer higher compatibility with the complementary metal-oxide-semiconductor (CMOS) process.


    In addition, SiC has a modest refractive index (2.6) at NIR wavelengths. As a result, silicon dioxide (SiO2) and other cladding materials with low refractive indices may be effectively contained optically within the SiC waveguide core.


    Devices made on SiC integrated photonics may have a small footprint. SiC thin-films having a disparity in the refractive indices, however, are not easily accessible from commercial SiC wafers.


    While 3C-SiC thin-films are epitaxially grown on Si substrates, which have a higher refractive index than the SiC layer and are not appropriate for integrated photonic applications, 4H-/6H-SiC thin-films are often grown into bulk substrates.


    These tough SiC sheets are incapable of wet transfer, unlike soft materials like graphene. As a result, strategies for realising integrated photonic platforms based on SiC-on-insulator (SiCoI) have lately attracted a lot of research attention.


    In order to develop 4H-/6H-SiCoI platforms for bulk wafers, researchers first molecularly bonded a bulk SiC wafer to a Si wafer with a thermal SiO2 optical insulating layer. This is a very difficult technique that calls for stringent surface cleanliness and a minimal level of surface roughness (1 nm RMS).


    The majority of the SiC wafer is generally removed and polished using industrial-level wafer grinding and chemical mechanical polishing (CMP) equipment, and then dry etching is used to achieve the desired SiC layer thickness. 


    These procedures squander the majority of the SiC wafer and result in significant thickness non-uniformity on a big scale. Despite the aforementioned problems, scientists have used this device to show a high loaded Q factor of 9.7 105 and third-order optical parametric oscillation.


    Additionally, they showed second-harmonic production from a microring resonator at 1550 nm and 780 nm, respectively, with loaded Q values of 8 104 and 2 104. Using the smart-cut approach is an alternate strategy for managing SiC film thickness.


    Researchers used a microring resonator based on this device to demonstrate a loaded Q value of 7.4 104. After bonding, this method may provide a film thickness that is well-controlled. However, the apparatus must handle a significant dosage of H ions being implanted into the 4H-SiC wafer. The SiC layer may deteriorate as a result of the damage brought on by ion bombardment.


    Growing crystalline thin-films on Si wafers may be a viable option for mass production that is both affordable and scalable to the wafer level. The sole cubic form of SiC polytypes, 3C-SiC, can be epitaxially produced on Si substrates.


    Researchers may easily remove the Si substrate using wet and dry etching after molecularly connecting the 3C-SiC-on-Si wafer to another optical insulating wafer since the 3C-SiC film can function as an etch stop layer.


    The initial SiC/Si interface, which is the exposed 3C-SiC surface and has a subpar crystal quality, is frequently eliminated using the subsequent dry etching procedure. Researchers used a microring and a microdisk resonator based on this technology to produce inherent Q values of 1.42 105 and 2.42 105, respectively. 


    Another electro-optic modulator with a 3dB bandwidth of 7.1 GHz was also developed by researchers employing a microring resonator with an inherent Q value of 8.9 104. Creating suspended 3C-SiC resonators and waveguides by undercutting the Si substrate is one technique to sidestep the labor-intensive molecular bonding procedure.


    This method leaves the original poor-quality SiC surface in place and is less mechanically stable. This platform’s microrings have an inherent Q value of 4.1 104, which was recently reported. Researchers used amorphous SiC placed on a thermal oxide layer to demonstrate a microring resonator with a loaded Q value of 1.4 105. However, second-order nonlinear optical susceptibilities are not present in the bulk of the amorphous films.



    1. How many Silicon carbide substrate are manufactured per annum globally? Who are the sub-component suppliers in different regions?
    2. Cost breakup of a Global Silicon carbide substrate and key vendor selection criteria
    3. Where is the Silicon carbide substrate manufactured? What is the average margin per unit?
    4. Market share of Global Silicon carbide substrate market manufacturers and their upcoming products
    5. Cost advantage for OEMs who manufacture Global Silicon carbide substrate in-house
    6. key predictions for next 5 years in Global Silicon carbide substrate market
    7. Average B-2-B Silicon carbide substrate market price in all segments
    8. Latest trends in Silicon carbide substrate market, by every market segment
    9. The market size (both volume and value) of the Silicon carbide substrate market in 2024-2030 and every year in between?
    10. Production breakup of Silicon carbide substrate market, by suppliers and their OEM relationship
    Sl no Topic
    1 Market Segmentation
    2 Scope of the report
    3 Abbreviations
    4 Research Methodology
    5 Executive Summary
    6 Introduction
    7 Insights from Industry stakeholders
    8 Cost breakdown of Product by sub-components and average profit margin
    9 Disruptive innovation in the Industry
    10 Technology trends in the Industry
    11 Consumer trends in the industry
    12 Recent Production Milestones
    13 Component Manufacturing in US, EU and China
    14 COVID-19 impact on overall market
    15 COVID-19 impact on Production of components
    16 COVID-19 impact on Point of sale
    17 Market Segmentation, Dynamics and Forecast by Geography, 2024-2030
    18 Market Segmentation, Dynamics and Forecast by Product Type, 2024-2030
    19 Market Segmentation, Dynamics and Forecast by Application, 2024-2030
    20 Market Segmentation, Dynamics and Forecast by End use, 2024-2030
    21 Product installation rate by OEM, 2023
    22 Incline/Decline in Average B-2-B selling price in past 5 years
    23 Competition from substitute products
    24 Gross margin and average profitability of suppliers
    25 New product development in past 12 months
    26 M&A in past 12 months
    27 Growth strategy of leading players
    28 Market share of vendors, 2023
    29 Company Profiles
    30 Unmet needs and opportunity for new suppliers
    31 Conclusion
    32 Appendix
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