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HF small-signal predictability, including insertion loss and isolation, is a common state of the art. The SOI substrate and the transistor both contribute to an SOI FET switch’s nonlinearity through a variety of mechanisms.
In a switch composed of numerous FETs stacked in series, the voltage imbalance, which is a direct consequence of the substrate loss, is the first factor that causes the non-linearity.
At high power levels, the primary cause of nonlinearity in a FET switch is the voltage imbalance. Second, the harmonic floor is set by the non-linear substrate itself.
The switch linearity will also be affected by other significant SOI physics, such as the floating-body effect and the parasitic BJT effect, in addition to the substrate.
Finally, excellent non-linearity predictability was demonstrated on a real-world RF switch in a hybrid model that incorporates a layout-dependent non-linear SOI substrate model and PSP as the FET core.
The Global SOI-FET semiconductors market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
It was widely acknowledged that novel MOSFET structures were urgently required in order to keep the pace of progress from slackening in order to continue the onward progression from the point where the classical MOSFET failed to meet the expectations of Moore’s law.
In addition, it became clear that short-channel effects could not be avoided unless the gate action could be increased to the point where the channel region is always under the gate’s sole control.
The coming of silicon-on-protector innovation came as a forward leap to save the CMOS engineers. The market saw the introduction of partially depleted silicon-on-insulator (SOI) MOSFETs first, followed by fully depleted MOSFETs.
The technological transformation that eventually leads to downscaling to lower levels is centred on the fully depleted MOSFETs.
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