Ultra High Resistivity wafers are high-performance silicon substrates designed for demanding radio frequency filter and device applications. The Engineered Ultra High Resistivity wafers have bulk resistivities of above 10,000 Ohm-cm, a low Oi, and a highly efficient trap-rich layer.
Crystal growth technique is used in this most advanced wafer technology to give greatest resistivity and best technical performance in the form of close to zero substrate-induced losses and nonlinearities for RF devices.
The Global ultra high resistivity wafers market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
Okmetic Engineered Ultra High Resistivity SSP and DSP wafers with over 10,000 Ohm-cm resistivity and a highly effective trap-rich layer enable RF devices to have close to zero substrate-induced losses and nonlinearities.
These premium wafers have been tailored to suit the most stringent RF filter requirements.
Engineered Ultra High Resistivity wafers are optimised for demanding RF filter and device applications, with the goal of making RF device design and modelling easier.
Engineered Ultra High Resistivity wafers include the highest effective resistivity, near-zero substrate-induced losses and nonlinearities, and improved 2nd harmonic and intermodular distortion (IMD) values.
Engineered Super High Resistivity wafers allow RF filters to achieve incredibly low resonance frequency levels of -90 dBm at 900 MHz basic tone and pretty low IMD3 values of even -105 dBm.
The designed trap-rich layer can be adjusted to the unique customer procedure in order to maximise harmonic behaviour gains and overall losses.
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