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A VCSEL device is a laser die made of semiconductor-based epitaxial layers grown on substrates such as n-type GaAs or InP. The epitaxy is carried out using metal-organic chemical vapour deposition or molecular beam epitaxy (MBE) (MOCVD).
Small size, a small circular output spot, a single longitudinal mode output, a low threshold current, a low cost, and simple integration into a large-area array are all benefits of VCSEL device construction.
The Global VCSEL Epiwafer Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The 200 mm (8″) VCSEL epiwafer is the first of its kind to be made commercially available, according to IQE plc, the industry’s top producer of compound semiconductor wafer products and advanced material solutions.
The market for IQE will grow as a result of the unit economics for compound semiconductors being transformed by IQE’s 200mm epiwafers. New foundry collaborations, particularly those with silicon-based foundries, will be affected by the increase in wafer size. Additionally, it makes it possible for compound semiconductors to be integrated on silicon, opening up a wider choice of devices and applications.
The top manufacturer of high-tech, uncooled, middle- and long-wavelength photodetectors in the world, VIGO System, has expanded its product line to include new, creative epi-structures for vertical-cavity surface-emitting lasers (VCSEL). To show that it can fulfil the growing demand from its clients for innovative epiwafer technology, the business has created its first VCSEL.
The 850 nm VCSEL epi-structure is suited for telecom and datacom optical applications because it has optical power > 4 mW, a low threshold current of 0.6 mA, and appropriate spectrum characteristics. VCSELs provide a highly efficient optical beam, superb focusing, and a relatively compact footprint when compared to other infrared technologies.
