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A VCSEL device is a laser die made of semiconductor-based epitaxial layers grown on substrates such as n-type GaAs or InP. The epitaxy is carried out using metal-organic chemical vapour deposition or molecular beam epitaxy (MBE) (MOCVD).
Small size, a small circular output spot, a single longitudinal mode output, a low threshold current, a low cost, and simple integration into a large-area array are all benefits of VCSEL device construction.
The Global VCSEL Epiwafer Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The 200 mm (8″) VCSEL epiwafer is the first of its kind to be made commercially available, according to IQE plc, the industry’s top producer of compound semiconductor wafer products and advanced material solutions.
The market for IQE will grow as a result of the unit economics for compound semiconductors being transformed by IQE’s 200mm epiwafers. New foundry collaborations, particularly those with silicon-based foundries, will be affected by the increase in wafer size. Additionally, it makes it possible for compound semiconductors to be integrated on silicon, opening up a wider choice of devices and applications.
The top manufacturer of high-tech, uncooled, middle- and long-wavelength photodetectors in the world, VIGO System, has expanded its product line to include new, creative epi-structures for vertical-cavity surface-emitting lasers (VCSEL). To show that it can fulfil the growing demand from its clients for innovative epiwafer technology, the business has created its first VCSEL.
The 850 nm VCSEL epi-structure is suited for telecom and datacom optical applications because it has optical power > 4 mW, a low threshold current of 0.6 mA, and appropriate spectrum characteristics. VCSELs provide a highly efficient optical beam, superb focusing, and a relatively compact footprint when compared to other infrared technologies.
A cutting-edge product line created by Intel Corporation for the epi wafer market is the Intel Epi Wafer 100 Series. The creation of semiconductor devices, such as microprocessors, memory chips, and other cutting-edge electronic components, depends heavily on epi wafers, sometimes referred to as epitaxial wafers.
The Intel Epi Wafer 100 Series is especially made to satisfy the semiconductor industry’s rising demand for high-performance and dependable epi wafers. The series differs from traditional epi wafers in that it offers a number of cutting-edge characteristics and abilities. The Intel Epi Wafer 100 Series is distinguished by outstanding crystal quality.
As a result of the remarkable uniformity and smoothness of the epitaxial layers produced on these wafers, improved electrical and optical properties are guaranteed.
Intel uses cutting-edge deposition techniques and strict quality control procedures to produce crystals with such high quality. Additionally, the series provides exact layer thickness control, allowing engineers and researchers to customize the epitaxial layers to meet particular needs.
Accurate layer thicknesses are essential for maximizing yield, reducing power consumption, and improving device performance while the product is being manufactured.
Additionally, the defect density control of the Intel Epi Wafer 100 Series is exceptional. For increasing device reliability and production, low defect densities are essential.
The epi wafers produced in this series contain a minimum amount of crystal defects, dislocations, and other flaws that could impair device functioning because to Intel’s cutting-edge defect reduction procedures and in-line monitoring systems.
The Intel Epi Wafer 100 Series has many different material alternatives, including silicon, gallium arsenide (GaAs), and indium phosphide (InP). Whether creating high-speed digital circuits, optoelectronics, or power devices, semiconductor makers may choose the best material for their particular applications because to this adaptability.
The Intel Epi Wafer 100 Series is a great option for both established and developing semiconductor technologies since it is extremely compatible with a variety of device topologies.
Engineers can push the limits of performance and functionality by incorporating it smoothly into advanced CMOS processes, bipolar transistors, HBT (heterojunction bipolar transistor) topologies, and other device designs.
Furthermore, thorough technical documentation and customer support are available for the Intel Epi Wafer 100 Series. For the effective deployment of its epi wafers, Intel Corporation provides comprehensive process recipes, characterisation data, and application notes.
Furthermore, they have a staff of professionals on hand to respond to customer questions and offer support during the design and manufacturing phases. A well-known brand of epi wafers sold by Samsung Electronics, a top-tier international technology corporation, is the Samsung EpiStar Series.
The creation of cutting-edge semiconductor devices and the creation of cutting-edge electronic applications depend heavily on these wafers. he Samsung EpiStar Series is a line of premium epi wafers created to satisfy the strict specifications of the semiconductor industry.
These wafers are the basis for the creation of several electronic parts, such as integrated circuits (ICs), microprocessors, memory units, and sensors. The EpiStar Series enables the deposition of semiconductor layers with excellent electrical and material properties by offering a precise and controlled epitaxial growth surface.
The superior epitaxial growth technology of the Samsung EpiStar Series is one of its defining qualities. In order to achieve outstanding uniformity, crystal quality, and layer thickness control throughout the epitaxial growth process, Samsung has created patented techniques. By ensuring uniform and dependable functioning over numerous wafers, this makes it possible to produce semiconductor devices in high yields.
