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Volatile organic compounds (VOCs) are organic substances that exist in the gas phase at standard room temperature. The word “VOC” refers to a broad spectrum of chemical substances, both man-made and naturally occurring.
Volatile organic compounds can be found using a variety of fixed sensors and portable gas monitors known as VOC Gas Detectors. To prevent unsafe poisonous levels of VOC gases from accumulating, it’s critical for many sectors to have precise and quick detection systems.
The Global VOC Gas Monitor market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Recent Advances in Silicon FET Devices for Gas and Volatile Organic Compound Sensing.Gas and volatile organic compound (VOC) sensor platforms that are highly sensitive, selective, and have quick response and recovery kinetics are highly sought-after for environmental health monitoring, industry, and medical diagnostics.
Field effect transistors (FETs) have emerged as the most effective platform among the numerous types of gas sensors examined to date because of their highly sensitive design, miniature size, and extremely low power requirements.
The advantages of silicon (Si) remain its good and repeatable electronic properties and compatibility with complementary metal-oxide-semiconductor (CMOS) technologies for integrated multiplexing and signal processing, even in the face of the development of numerous new types of materials.
Si FETs’ most recent advancements in gas and VOC sensing. We divided the Si FETs into three categories: Si nanowire (NW) FETs, planar Si FETs, in which the Si channel is either a component of the silicon on insulator (SOI), as in conventional FETs, or the bulk Si, and electrostatically generated nanowire (EFN) FETs.
A general background is followed by a description of the Si NW FET gas and VOC sensors . The numerous Si NW fabrication techniques and the various functionalization techniques to enhance Si NW sensing capability are also described.
Despite Si NW FETs’ superior sensing capabilities, their extensive fabrication processes and other problems—some of which are critically evaluated briefly—keep them from being widely used.
Then, we go through planar Si FET sensors, which are significantly more applicable to actual application. They are an effective platform for gas sensing due to their simplified device architecture and great sensing characteristics.
Due to its fascinating features, which are described in detail, the third group of sensors—EFN FET sensors—proved to be yet another possible platform for gas sensing.
