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A vacuum chamber, customised gas delivery system, radio frequency (RF) waveform generator to power the plasma, heated chuck to seat the wafer and exhaust system comprise the dry etching hardware design.
Chemical etching wafers is a technique that removes material from the surface of a wafer in layers during the fabrication of Silicon Wafers (Si), Gallium Arsenide (GaAs), and Gallium Nitride wafers.
Wet chemical etching methods use dissolving processes to remove components from the top layer of an integrated device structure.Dry etching is often an anisotropic method in which the momentum of accelerating ion species combined with a masking process is employed to physically remove and etch the target materials.
The Global Wafer Dry Etching System Market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The NA-1500 dry etching equipment from ULVAC is designed for 600mm advanced packaging substrates. ULVAC debuted the NA-1500 dry etching equipment for 600mm advanced packaging substrates, which allows for consistent Descum and Ti etching procedures.
Higher data transfer rates necessitate high-density packaging, whereas modern mobile and wireless devices necessitate thinner and higher-pin-count IC packages. Fan-Out Wafer Level Packaging (FO-WLP) is common, whereas Panel Level Packaging expands substrate size from 300mm to 600mm.
While there are several dry etching systems for 200mm/300mm wafers on the market today, there was no dry etching system for 600mm substrate that provided a uniform Descum process and Ti etching procedure. ULVAC created the technology to meet this need while also supporting mass-produced packaging processes.
Because the plasma source is also suitable for fluorine gases, seed layer Ti etching, which needs a wet procedure, can be carried out without the need for side etching.
The NA-1500 also supports SiO2 and SiN etching. The NA-1500 dry etching system also offers reliable transfer and operations that are free of anomalous discharge, guaranteeing that warpage from the expanded substrate is never a concern.
