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High power levels are necessary for various applications, such as active phased array antennas for airborne radar.
A MMICX Band Distributed Amplifier solution is obviously very appealing since it offers great performance and high manufacturing yield at a reduced cost.
By selecting an effective technology for active components, this can be accomplished. To extend the range and improve the likelihood that objects will be detected, a typical radar system runs with high output power .
In the past, it has not been possible to reach very high power levels at high frequency using semiconductor-based amplifiers.
Instead, amplifiers with large power levels can operate using vacuum electron devices . The travelling wave tube (TWT), a large, bulky device that requires high voltage to operate, is one example.
Additionally, they have numerous mechanical components that could malfunction.
The Global X Band Distributed Amplifier market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
Business Wire — LOWELL, Mass. Two new high power MMIC X Band Distributed Amplifier From M/A-COM Technology Solutions Inc. (“MACOM”), a well-known provider of high performance RF, microwave, and millimetre wave equipment, are perfect for X-Band communication and radar applications.
The MAAP-015030 two stage 8.5 – 11.75 GHz GaAs MMIC power amplifier boasts 40% power added efficiency, a huge signal gain of 21dB, and a saturated pulsed output power of 41dBm.
For high power X-Band applications, the power amplifier can be biassed either directly with a gate voltage or through an on-chip gate bias circuit.
A three-stage 8.5–11.5 GHz GaAs pHEMT MMICX Band Distributed Amplifier the MAAP-015035, can produce a saturated pulsed output power of 41 dBm with a small signal gain of 36 dB.
A direct gate voltage or an on-chip gate bias circuit can be used to directly bias the power amplifier’s gate terminals. The chip delivers extremely high power efficiency of 40% and gives.
