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FIB-SEM may be regarded as an improved form of SEM that provides high-resolution pictures and is employed in a variety of industries.
The approach is being improved as it finds new applications, such as creating high-quality 3D pictures, visualizing neurons, and assisting in the development of fuel cell technology.The FIB-SEM (Focused Ion Beam Scanning Electron Microscope) technology evolved from a simpler version of the SEM (Scanning Electron Microscope).
The difference between SEM and FIB-SEM is that the electron beam used in SEM is replaced with a focussed beam of ions in FIB-SEM.
Aside from the transformation from an electron beam to an ion-focused beam, the two approaches are almost identical. Furthermore, the FIB-SEM technique generates pictures with significantly better resolutions to the nanoscale level.
A focussed beam of ions is utilized in FIB to directly alter a sample’s surface. To achieve a specific result, such as generating minute components or removing ultrathin layers of tissue/material for examination, both the energy and the movement of the beam are accurately regulated with nanoscale accuracy.
When a FIB is paired with a SEM, a dual electron beam contacts the ion beam just above the sample’s surface, enabling immediate SEM imaging of the FIB-milled surface. The FIB-SEM technology combines high-resolution imaging with chemical analysis.
The approach is widely used in semiconductor and electrical development, materials science, biology, neurology, and other domains.The FIB-SEM technique’s 3D imaging capacity has made it an appealing investigative tool embraced by numerous industries for usage in a wide variety of applications.
The pictures have a higher z-axis resolution, which means that steps like registration and post-processing aren’t as necessary as with comparable approaches.
Recent research has aided in the development of FIB-SEM, allowing it to overcome its limitations of relatively slow imaging speed and lack of stability, which had previously limited the method’s feasible acquisition volume, limiting its usage in many applications.
A recent research published in the journal Materials Science in Semiconductor Processing described how scientists were able to increase these quantities while enhancing FIB-SEM dependability.
The study team was able to broaden the FIB-SEM approach, which had previously been demonstrated to be especially successful at achieving better resolutions on smaller quantities.
This advancement enabled various novel FIB-SEM applications, including the evaluation of brain tissue and the investigation of cell biology.
The Global 3D Analytical FIB-SEM Market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Hitachi High-Tech Corporation has introduced the 3D SEM1 CT1000, which is necessary for defect monitoring in the semiconductor sector. This device provides 3D observation of pattern and defect forms that emerge during the production process on wafers in diameter, including an elemental composition analysis function.
This product will aid in the quality assurance of IoT (Internet of Things) and automotive semiconductor devices in-vehicle. With the rise of electric vehicles and smartphones that use 5G networks in recent years, the IoT and in-vehicle device market has seen an increase in the number of IC chips installed, as well as a corresponding demand for higher-quality, safer, and more reliable three-dimensional structured semiconductor devices.
JEOL Ltd. has announced the release of the JIB-PS500i FIB-SEM system. With the finer structure of new materials and increasing process complexity, assessment techniques such as morphological observation and elemental analysis demand more resolution and precision.
Higher accuracy and thinner samples are required in the production of samples for transmission electron microscopes (TEM) in the semiconductor sector, as well as in the battery and materials areas.
To meet these requirements, this device is a combination of a high-accuracy FIB (Focused Ion Beam) system with a high-resolution SEM (scanning electron microscope). A high-current Ga ion beam may be processed using the FIB column.
High-current processing is very useful for preparing cross-section samples for large-area imaging and analysis. Furthermore, the FIB column has a shorter working distance. It has resulted in significantly increased processing performance at low accelerating voltage when combined with a newly built power supply.
The SEM column has a newly designed super conical lens system, which considerably improves picture resolution at low accelerating voltage. This excellent imaging is quite beneficial for determining the end-point milling state of lamella specimens using the SEM.
The JIB-PS500i has a large specimen chamber and a newly constructed specimen stage, which increases the stage movement range and therefore allows for a huge specimen. Furthermore, a newly built STEM detector that can be utilized in conjunction with the stage tilt allows for a smooth transition from TEM specimen preparation to STEM observation.
The SEM center operational GUI, which has been highly welcomed in the JSM-IT800 series of high-resolution scanning electron microscopes, is used for the operating GUI, allowing complete integration of EDS analysis.
A twofold tilt cartridge and a specialized TEM holder allow for more exact alignment while also facilitating specimen transfer between TEM and FIB.
