600V GAN POWER DEVICE MARKET

INTRODUCTION

There are two types of 600V/650V Gan devices: depletion-mode (typically on) and enhancement-mode (typically off). A low-voltage silicon MOSFET is utilized in series to drive the Gan, which is referred to as cascade structure, making it simple to apply a normally on Gan in circuit design.

GaN devices clearly have considerably reduced Qi and Cos values, according to the device characteristics, which suggests that they can operate at higher frequencies. Systematic research has been done on cascade Gan device characteristics. According to the analytical and experimental findings, the charge of the free-wheeling switch contributes significantly to the turn-on switching loss, but the current source driving mechanism contributes significantly to the turn-off switching loss, which is minimal and load current independent.

The usage of two separate devices results in increased interconnect parasitic inductance, which may slow down switching and result in internal oscillation under conditions of high load current.

600V GAN POWER DEVICE MARKET SIZE AND FORECAST

The Global 600V Gan power device market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

600V GAN POWER DEVICE MARKET NEW PRODUCT LAUNCH

Recently, Texas Instruments unveiled a new lineup of ready-to-use, 600-V, 50-m and 70-m Gallium Nitride (Gan), power stages to enable applications up to 10 kW. Compared to silicon field-effect transistors (FETs), the LMG341x family enables designers to construct smaller, more effective, and higher-performing solutions for AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom, and personal electronics applications.

By incorporating special functional and protection characteristics to simplify design, enable improved system reliability, and maximize the performance of high-voltage power supplies, TI's family of Gan FET devices offers a clever substitute for conventional cascade and stand-alone Gan FETs. The devices avoid thermal runaway and unintentional shoot-through events with integrated 100-ns current limiting and over temperature detection, while system interface signals allow for self-monitoring.

600 V GAN POWER DEVICE MARKET COMPANY PROFILE

• Fujitsu
• Toshiba
• Koninklijke 
• Philips
• Texas Instruments
• EPIGAN

THIS 600 V GAN POWER DEVICE MARKET REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost per Global 600V Gan power device market right now and how will it change in the next 5-6 years?
2. Average cost to set up a Global 600V Gan power device market in the US, Europe and China?
3. How many Global 600V Gan power device markets are manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of a Global 600V Gan power device market and key vendor selection criteria
6. Where is the Global 600V Gan power device market manufactured? What is the average margin per equipment?
7. Market share of Global 600V Gan power device market manufacturers and their upcoming products
8. The most important planned Global 600V Gan power device market in next 2 years
9. Details on network of major Global 600V Gan power device market and pricing plans
10. Cost advantage for OEMs who manufacture Global 600V Gan power device market in-house
11. 5 key predictions for next 5 years in Global 600V Gan power device market
12. Average B-2-B Global 600V Gan power device market price in all segments
13. Latest trends in Global 600V Gan power device market, by every market segment
14. The market size (both volume and value) of Global 600V Gan power device market in 2024-2030 and every year in between?
15. Global production breakup of Global 600V Gan power device market, by suppliers and their OEM relationship